N-Channel charge coupled device fabrication process

TLDR: In this article, the authors describe a process of construction of an Nchannel charge coupled device, which is a step-by-step series of operations which will produce on a P-type substrate of silicon a series of interposed spaced polysilicon gates and aluminum gates.

Abstract: This abstract describes a process of construction of an Nchannel charge coupled device. It provides a step-by-step series of operations which will produce on a P-type substrate of silicon a series of interposed spaced polysilicon gates and aluminum gates. The polysilicon gates are deposited on a thin silicon nitrade layer which is positioned on a thin silicon oxide layer, both of minimum thickness, so there is good capacitive coupling between the polysilicon and the silicon. A thick layer of silicon oxide is formed over the polysilicon gate, after which the nitride layer between the polysilicon gates is etched away. A silicon oxide layer is deposited in the space between the nitride areas and on top of that an aluminum gate is deposited. Conventional means are provided to attach conductor leads to the polysilicon gates. If desired Boron or other elements can be implanted in the silicon before the oxide and aluminum gates are deposited.