Journal ArticleDOI
Needle-like crystallization of Ni doped amorphous silicon thin films
TLDR
In this paper, the crystallization behavior of Ni doped co-sputtered amorphous silicon thin films (MSP a-Si(Ni)) is investigated by means of NIR-VIS-UV transmission spectroscopy and STEM.About:
This article is published in Solid State Communications.The article was published on 1993-03-01. It has received 172 citations till now. The article focuses on the topics: Amorphous solid & Crystallization.read more
Citations
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Patent
Semiconductor device and method for forming the same
TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent
Semiconductor Device and Method of Fabricating the Same
TL;DR: In this paper, an active matrix display (AMD) with pixel electrodes, gate wirings and source wires is proposed, in which pixel electrodes are arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the amount of steps.
Patent
Electro-optical device
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Patent
Thin-film transistor
Hongyong Zhang,Shunpei Yamazaki +1 more
TL;DR: In this paper, a gate-insulated thin-film transistor with a halogen block in between the blocking layer and a gate insulator is described. But the block is not used to prevent the transistor from being contaminated with impurities such as alkali ions.
Patent
Semiconductor device and manufacturing method therefor
TL;DR: In this paper, a gate overlapping structure is realized with the side wall functioning as an electrode, where the first impurity region is formed to be overlapped with a side wall.
References
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Silicides for VLSI applications
TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.
Journal ArticleDOI
Mesotaxy: single-crystal growth of buried CoSi2 layers
TL;DR: In this paper, single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing, and electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques.
Journal ArticleDOI
Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films
TL;DR: In this paper, the nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel were investigated using scanning transmission electron microscopy, and it was shown that the growth rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C.
Related Papers (5)
Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
Stephen J. Fonash,Gang Liu +1 more