Journal ArticleDOI
Nonlinear analysis of microwave FET oscillators using Volterra series
Y. Hu,J.J. Obregon,J.-C. Mollier +2 more
TLDR
In this paper, a novel approach for determining the amplitude and frequency of nonlinear FET oscillators is presented, where the nonlinear elements of the active device are modeled by the Volterra series method and the frequency and amplitude of oscillation are calculated by solving two algebraic equations.Abstract:
A novel approach for determining the amplitude and frequency of nonlinear FET oscillators is presented. The nonlinear elements of the active device are modeled by the Volterra series method. The frequency and amplitude of oscillation are then calculated by solving two algebraic equations. Experimental results obtained from a constructed oscillator confirm the validity of the theory, the discrepancy between measured and calculated frequency and amplitude values being less than 10%. >read more
Citations
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Journal ArticleDOI
Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model
Jose C. Pedro,Jorge Perez +1 more
TL;DR: In this paper, the cross terms of the Taylor series expansion of the Ids(Vgs,Vds) Taylor series were extracted from the Volterra series and used for the prediction and understanding of MESFET's load-pull behavior.
Journal ArticleDOI
Nonlinear circuit analysis using the method of harmonic balance—a review of the art. II. Advanced concepts
TL;DR: The harmonic balance method is a technique for the numerical solution of nonlinear analog circuits operating in a periodic, or quasi-periodic, steady-state regime as mentioned in this paper, which can be used to efficiently derive the continuous-wave response of numerous nonlinear microwave components including amplifiers, mixers, and oscillators.
Journal ArticleDOI
Integrated physics-oriented statistical modeling, simulation, and optimization (MESFETs)
TL;DR: In this paper, a large-signal physics-based model is integrated into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique.
Journal ArticleDOI
Physics-based electron device modelling and computer-aided MMIC design
TL;DR: In this article, the state of the art and future trends in physics-based electron device modelling for the computer-aided design of monolithic microwave ICs are provided. But the authors focus on the use of state-of-the-art physics-and analytical or numerical models for circuit analysis, with particular attention to the role of intermediate behavioral models in linking multidimensional device simulators with circuit analysis tools.
Journal ArticleDOI
Computer-aided analysis of free-running microwave oscillators
TL;DR: In this article, a free-running steady-state oscillator analysis algorithm for large-signal oscillators is presented, where Kurokawa's oscillation condition is coupled with the modified nodal admittance form of the circuit equations to avoid degenerate solutions.
References
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Journal ArticleDOI
Analysis of nonlinear systems with multiple inputs
TL;DR: Analytical modeling of communication receivers to account for their nonlinear response to multiple input signals is discussed, based on the application of the Wiener-Volterra analysis of nonlinear functionals.
Journal ArticleDOI
State of the art and present trends in nonlinear microwave CAD techniques
Vittorio Rizzoli,Andrea Neri +1 more
TL;DR: A survey of modern nonlinear CAD techniques as applied to the specific field of microwave circuits shows that the various subjects are not just separate items, but rather can be chained in a strictly logical sequence.
Journal ArticleDOI
Nonlinear oscillation via Volterra series
Leon O. Chua,Yawshing Tang +1 more
TL;DR: Using a novel approach, the amplitude and frequency of nearly sinusoidal nonlinear oscillators can be calculated by solving two algebraic nonlinear equations using a recursive algorithm based on Volterra series.
Journal ArticleDOI
Design of Broad-Band Power GaAs FET Amplifiers
Y. Tajima,P.D. Miller +1 more
TL;DR: A model is presented for the drain-gate breakdown phenomenon of GaAs FET's, based on experimental results, which is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET.
Journal ArticleDOI
A Comparison of IMPATT Oscillator Power and Frequency Above 100 GHz with Results Derived from Theoretical Models
TL;DR: In this article, a comparison of experimentally determined IMPATT oscillator frequency and power characteristics in the 90-140 GHz band with values obtained from detailed theoretical models is made, and the results show encouraging agreement and demonstrate the potential of the modeling approach for oscillator design.