Journal ArticleDOI
Design of Broad-Band Power GaAs FET Amplifiers
Y. Tajima,P.D. Miller +1 more
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TLDR
A model is presented for the drain-gate breakdown phenomenon of GaAs FET's, based on experimental results, which is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET.Abstract:
A model is presented for the drain-gate breakdown phenomenon of GaAs FET's, based on experimental results. this breakdown model is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET. The program is capable of searching for the optimum power load for an FET and simulating the power performance of multistage amplifiers. The design of power amplifiers is discussed in detail, using the knowledge gained from LSFET. Data is presented from a fabricated monolithic broad-band power amplifier chip showing good agreement between measured results and simulated curves.read more
Citations
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Journal ArticleDOI
A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers
W.R. Curtice,M. Ettenberg +1 more
TL;DR: In this article, a nonlinear equivalent circuit model for the GaAs FET has been developed based upon the small-signal device model and separate current measurements, including drain-gate avalanche current data.
Journal ArticleDOI
An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR
Olivier Jardel,F. De Groote,Tibault Reveyrand,Jean-Claude Jacquet,C. Charbonniaud,Jean-Pierre Teyssier,D. Floriot,Raymond Quéré +7 more
TL;DR: In this paper, a large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed, which is well formulated to preserve convergence capabilities and simulation times.
Journal ArticleDOI
A Nevv Method of Third-Order Intermodulation Reduction in Nonlinear Microwave Systems
TL;DR: In this article, theoretical results which have been calculated with a nonlinear FET model show that third-order intermodulation prodgcts of two input signals at f/sub 1/ and f/ sub 2/ can be reduced by several orders of magnitude (in fact, theoretically, IMD (3) should be reduced to zero).
Journal ArticleDOI
Quasi-linear amplification using self-phase distortion compensation technique
TL;DR: In this paper, a self-phase distortion compensation technique was proposed to realize linear power amplifiers, in which the positive phase deviation from a common-source FET and the negative phase deviation of a commongate FET cancel each other.
Journal ArticleDOI
Nonlinear analysis of microwave FET oscillators using Volterra series
Y. Hu,J.J. Obregon,J.-C. Mollier +2 more
TL;DR: In this paper, a novel approach for determining the amplitude and frequency of nonlinear FET oscillators is presented, where the nonlinear elements of the active device are modeled by the Volterra series method and the frequency and amplitude of oscillation are calculated by solving two algebraic equations.
References
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Journal ArticleDOI
GaAs FET large-signal model and its application to circuit designs
Y. Tajima,B. Wrona,K. Mishima +2 more
TL;DR: In this article, a large-signal GaAs FET model is derived based on dc characteristics of the device and analytical expressions of modeled nonlinear elements are presented in a form convenient for circuit design.
Proceedings ArticleDOI
A Technique for Predicting Large-Signal Performance of a GaAs MESFET
TL;DR: In this article, a method is described for accurately predicting the nonlinear microwave performance of GaAs MESFET devices using time-domain analysis and the experimentally characterized bias dependence of device-circuit model elements.
Proceedings ArticleDOI
Quasi-Static Approach to Simulating Nonlinear GaAs FET Behavior
C. Rauscher,H.A. Willing +1 more
TL;DR: In this paper, a quasi-static device model is used to predict nonlinear performance of microwave GaAs field effect transistors in arbitrary circuit embedding using a quasistatic model.
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