Observation, Analysis, and Simulation of the Hysteresis of Silicon Using Ultra-Micro-Indentation with Spherical Indenters

TLDR: In this paper, the authors investigated the hysteretic behavior of silicon under indentation using an ultra-micro-indentation system with an 8.5 μm spherical-tipped indenter.

Abstract: The recently reported hysteretic behavior of silicon under indentation (Clarke et al.1 and Pharret al.2-5) is investigated using an ultra-micro-indentation system with an 8.5 μm spherical-tipped indenter. The onset of “plastic” behavior during loading and hysteresis during unloading was readily observed at loads in excess of 70 mN. Cracking about the residual impression was observed only at loads of 350 mN and higher. An analysis of the data is presented that estimates the following: (1) the initial onset of deformation occurs at a mean pressure of 11.8 ± 0.6 GPa, (2) the mean pressure at higher loads is 11.3 ± 1.3 GPa, and (3) the hysteretic transition on unloading occurs at mean pressures between 7.5 and 9.1 GPa. These values are in good agreement with the accepted literature values for the known silicon transformation pressures. A simulation of the force-displacement data based on the analysis and model is presented and is found to fit the observations very well.