Journal ArticleDOI
OMVPE growth of AlxGa1−xAs
Gerald B. Stringfellow,H.T. Hall +1 more
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TLDR
The OMVPE growth technique has only recently been established to yield device quality III-V compounds and alloys as discussed by the authors, such as Al x Ga 1−x As, and it has been applied to lattice matched heterostructure devices such as solar cells and lasers, including multiquantum well structures.About:
This article is published in Journal of Crystal Growth.The article was published on 1978-01-01. It has received 64 citations till now.read more
Citations
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Journal ArticleDOI
Metalorganic chemical vapor deposition of III‐V semiconductors
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Journal ArticleDOI
High purity GaAs prepared from trimethylgallium and arsine
TL;DR: In this paper, a study of the sources and control of residual impurities in GaAs grown by metalorganic chemical vapor deposition (MOCVD) is presented, and the effects of source purity, growth temperature, and reactor pressure upon residual impurity incorporation are detailed.
Journal ArticleDOI
A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy
M.R. Leys,Hendrik Veenvliet +1 more
TL;DR: In this paper, the growth rate of epitaxial GaAs layers is dependent on the input partial pressure of trimethylgallium and on the total gas flow, and the effect of susceptor temperatures up to 750°C is small.
Journal ArticleDOI
Non-hydride group V sources for OMVPE
TL;DR: In this paper, a review of the available group V sources for organometallic vapor phase epitaxy (OMVPE) growth of III/V semiconductor materials is presented.
Journal ArticleDOI
Metalorganic CVD of GaAs in a molecular beam system
TL;DR: In this article, the feasibility of growing GaAs using molecular beams of Ga(CH 3 ) 3 and AsH 3 in an UHV system is shown using cold sources placed outside the system, these gaseous components are introduced into the growth apparatus and directed towards the substrate surface using capillary tubes with diffuser chambers.
References
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Journal ArticleDOI
The incorporation and characterisation of acceptors in epitaxial GaAs
TL;DR: In this paper, a systematic study of the incorporation of shallow acceptor dopants in highly refined VPE and LPE gallium arsenide has been carried out, which has resulted in an identification catalogue for the various elements which has been compared with the assignments of other workers.
Journal ArticleDOI
The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Journal ArticleDOI
Electron Transport in GaAs
Daniel L. Rode,S. Knight +1 more
TL;DR: In this paper, the electron drift mobility in GaAs has been calculated and extensively compared to experimental data, and good agreement is obtained for a wide range of temperature and ionized-impurity concentrations.
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The Use of Metal‐Organics in the Preparation of Semiconductor Materials I . Epitaxial Gallium‐ V Compounds
H. M. Manasevit,W. I. Simpson +1 more