Journal ArticleDOI
On the mechanism of switching effects in chalcogenide thin films
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TLDR
The role of Joule heating on the electrical characteristics of chalcogenide thin films has been analyzed both in the case of a static negative differential resistance (NDR) and switching as discussed by the authors.Abstract:
The role of Joule heating on the electrical characteristics of chalcogenide thin films has been analyzed both in the case of a static negative differential resistance (NDR) and switching. At electric fields above 104 V/cm the Poole-Frenkel effect causes an additional current component with a log I ∞ E12 dependency. In the presence of a disturbance in the sample the NDR characteristics will be replaced by switching due to a thermal runaway. Although a thermal runaway has a rather high speed in small samples a secondary switching mechanism can be expected to be present in the thermoformed filament.read more
Citations
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A Short History of Atomic Layer Deposition: Tuomo Suntola's Atomic Layer Epitaxy
TL;DR: Atomic layer deposition (ALD) is a thin film growth technique based on the repeated use of separate, saturating gas-solid reactions as discussed by the authors. And it has been used in many applications, such as photovoltaics and catalysis.
Journal ArticleDOI
Multilayer Al2O3/TiO2 Atomic Layer Deposition coatings for the corrosion protection of stainless steel
TL;DR: In this paper, characterization of different ALD layers has been carried out in order to evaluate the suitability of this deposition technolnique for the corrosion protection of stainless steel substrates.
Journal ArticleDOI
Threshold switching and the on-state in non-crystalline chalcogenide semiconductors: An interpretation of threshold-switching research
TL;DR: Experimental research on chalcogenide glasses is reviewed and an interpretation concerning the cause of threshold switching and the basis of the low-impedance on-regime is presented as discussed by the authors.
Journal ArticleDOI
Atomic layer deposition: state-of-the-art and research/industrial perspectives
TL;DR: A brief history of ALD is presented to better understand the evolution of the technique during the past few decades as mentioned in this paper, and a short description of the main ALD techniques is given, considering their main advantages and drawbacks.
Journal ArticleDOI
High field effects in chalcogenide thin films
TL;DR: In this article, the current and voltage characteristics of thin films made of Te-As-Ge-Si-type chalcogenide glass have been measured at various temperatures.
References
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Journal ArticleDOI
Reversible Electrical Switching Phenomena in Disordered Structures
TL;DR: In this paper, a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field was described in various types of disordered materials, particularly amorphous semiconductors covering a wide range of compositions.
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Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor Films
TL;DR: In this paper, experimental evidence is presented bearing on the low current conduction and on the rapid electrical switching phenomena that have been found in thin films of certain amorphous chalcogenide semiconducting materials.
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Threshold switching and thermal filaments in amorphous semiconductors
TL;DR: In this article, the authors used an infrared viewer to confirm the existence of a thermal filament during threshold switching in a thick specimen of an amorphous semiconductor and estimated the temperature of this filament to be between 650 and 800 °C.
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Physics of instabilities in amorphous semiconductors
TL;DR: In this article, a fourfold classification of current-controlled instabilities in amorphous semiconductors is proposed, and the experimenta evidence supporting a simple band model for the Amorphous covalent alloys is given.