Journal ArticleDOI
Optical Activation of Si and Ge Nanowires Codoping with Er:Yb Rare Earth by Sol–Gel Methods
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This article is published in Journal of Nanoelectronics and Optoelectronics.The article was published on 2007-08-01. It has received 6 citations till now.read more
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Journal ArticleDOI
Erbium Emission from Nanoengineered Silicon Surface
TL;DR: Optically active SiOx nanowires were grown on silicon by ion-implanting it with metallic impurities and annealed at 1100 °C in an argon ambient as discussed by the authors.
Journal ArticleDOI
From shelled Ge nanowires to SiC nanotubes
TL;DR: Shelled germanium nanowires up to 100 nm in diameter and several micrometers in length were prepared by low pressure chemical vapor deposition (LPCVD) of tris(trimethylsilyl)germane (SiMe(3))(3)GeH.
Journal ArticleDOI
Chemical toxicity detection using quantum dot encoded E. coli cells
TL;DR: A facile optical strategy that enables rapid and real-time cytotoxicity screening of potentially hazardous chemicals, such as new drugs that lead to ROS generation, is demonstrated.
Book ChapterDOI
The Selective Growth of Silicon Nanowires and Their Optical Activation
TL;DR: Wang et al. as discussed by the authors showed that 1D semiconducting nanowires possess some very unique properties such as quantum confinement effects, surface sensitivity, intrinsically miniaturized dimensions, and low leakage currents which make them attractive as building blocks for functional nanosystems and next generation electronics.
Journal ArticleDOI
Chemical route for Si/C coated germanium nanowires
TL;DR: In this paper, the formation of shelled germanium nanowires is discussed in the course of low pressure CVD of tris(trimethylsilyl)germane (SiCH3)3GeH leading to formation of the wires, which consist of a crystalline Ge core surrounded by a two-layer jacket.