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Optical Processes in Semiconductors
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Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)Abstract:
Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزیread more
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Journal ArticleDOI
Growth and characterization of Cu2SnSe3 thin films
TL;DR: In this paper, thin films of Cu2SnSe3, a potential candidate for acousto-optic device applications in IR region were prepared by co-evaporation onto glass substrates.
Journal ArticleDOI
Structural, optical, vibrational and photoluminescence studies of Sn-doped MoO3 sprayed thin films
A. Boukhachem,O. Kamoun,C. Mrabet,C. Mannai,N. Zouaghi,A. Yumak,Karem Boubaker,Mosbah Amlouk +7 more
TL;DR: In this article, the principal MoO 3 vibration's mode with the shift related to tin incorporation in MoO3 matrix was investigated. And the optical parameters, such as optical band gap, Urbach energy, refractive indices and dielectric constants were studied in terms of Sn doping level.
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Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy.
Xiaochuan He,Gangbei Zhu,Jianbing Yang,Hao Chang,Meng Qingyu,Hongwu Zhao,Xin Zhou,Shuai Yue,Zhuan Wang,Jinan Shi,Lin Gu,Donghang Yan,Yuxiang Weng +12 more
TL;DR: O observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy suggests that delocalization free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly.
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Growth and characterization of rhenium-doped MoS2 single crystals
TL;DR: In this paper, single crystalline platelets up to 10×10mm 2 surface area and 2mm in thickness were obtained by analyzing the X-ray diffraction profile, the structure of the single crystals shows rhombohedral symmetry.
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Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry
TL;DR: In this paper, the spectral properties of Al-and Ga-doped ZnO layers were studied in the spectral range from 1.5 to 5.4 eV using a four-zone null spectroscopic ellipsometer and using near-normal incidence reflectivity measurements.