Open AccessBook
Optical Processes in Semiconductors
Reads0
Chats0
TLDR
Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)Abstract:
Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزیread more
Citations
More filters
Journal ArticleDOI
The effect of substrate bias on the electrical and optical properties of In2O3 films grown by RF sputtering
C. E. Wickersham,J. E. Greene +1 more
TL;DR: In this article, partially degenerate n-type semiconducting films of In2O3 which are transparent in the visible spectrum have been grown on Corning 7059 glass substrates by rf sputtering.
Journal ArticleDOI
Influence of Mn incorporation on the structural and optical properties of sol gel derived ZnO film
TL;DR: In this paper, the effect of Mn incorporation on the structural and optical properties of the ZnO film has been investigated by using their X-ray diffraction spectra and the results showed that the surface morphology of the film was affected by the Mn incorporation.
Journal ArticleDOI
Passive optical limiting studies of nanostructured Cu doped ZnO–PVA composite thin films
TL;DR: In this paper, the authors used spin coating to investigate third order nonlinear optical and optical limiting properties under cw laser excitation, which may be attributed to self-defocusing effect, reverse saturable absorption, weak free carrier absorption and surface states properties originated from thermo optic effect.
Journal ArticleDOI
Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process
Mohd Firdaus Malek,Mohamad Hafiz Mamat,M.Z. Musa,Tetsuo Soga,Saadah Abdul Rahman,Salman A. H. Alrokayan,Haseeb A. Khan,M. Rusop +7 more
TL;DR: In this paper, the growth of polycrystalline ZnO thin films with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0.0.2〉 was investigated using X-ray diffraction.
Patent
High temperature semiconductor devices having at least one gallium nitride layer
TL;DR: In this paper, the gallium nitride layer is connected as an emitter to cause electron injection into the silicon carbide or gallium arsenide layer, and small electrodes are connected to the small electrodes to minimize blockage of radiation.