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Optical Processes in Semiconductors
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TLDR
Optical processes in semiconductors as mentioned in this paper, Optical Process in Semiconductors (OPP), Optical Process of Semiconductor (OPS) and Optical Process (OPI)Abstract:
Optical processes in semiconductors , Optical processes in semiconductors , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزیread more
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Optical and electrical properties of SnSe2 and SnSe thin films prepared by spray pyrolysis
TL;DR: In this article, a spray pyrolysis technique using SnCl 2 ·H 2 O and 1,1-dimethyl-2-selenourea as precursor compounds with a Se:Sn atomic ratio of 1:1 in the starting solution was used.
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Electrical, optical and microstructural properties of transparent conducting GZO thin films deposited by magnetron sputtering
TL;DR: In this article, thin films of transparent conducting gallium-doped zinc oxide (GZO) were deposited by magnetron sputtering technique onto glass substrates, and various methods to understand their microstructural, optical and electrical characteristics were investigated.
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Synthesis, structural, optical, electrical and thermoluminescence properties of chemically deposited PbS thin films
TL;DR: In this paper, the optical properties of PbS thin films with deposition times of 100, 115, 130 and 145 min were investigated using X-ray diffraction and morphological properties of the films were investigated by scanning electron microscopy.
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Femtosecond Spectroscopic Investigation of the Carrier Lifetimes in Digenite Quantum Dots and Discrimination of the Electron and Hole Dynamics via Ultrafast Interfacial Electron Transfer
TL;DR: In this paper, the femtosecond carrier dynamics of digenite copper sulfide quantum dots were analyzed using a single source precursor type process and the optical transitions and dynamic properties of the photoinduced charge carriers in these novel nanomaterials characterized by femto-cond time-resolved spectroscopy.
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure
TL;DR: Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP, which is fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile.