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Optical waveguiding in proton-implanted GaAs

E. Garmire, +3 more
- 01 Aug 1972 - 
- Vol. 21, Iss: 3, pp 87-88
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TLDR
In this article, an optical waveguide was produced in n-type GaAs by implantation with 300-keV protons, and the guiding was due to the elimination of charge carriers from the implanted region.
Abstract: 
We have produced optical waveguides in n‐type GaAs by implantation with 300‐keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15‐μ guided‐wave absorption.

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Citations
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Book

Optical Effects of Ion Implantation

P.D. Townsend, +2 more
TL;DR: In this article, the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies.
Journal ArticleDOI

Integrated optics and new wave phenomena in optical waveguides

P. K. Tien
- 01 Apr 1977 - 
Journal ArticleDOI

Non-Hermitian Physics

Yuto Ashida, +2 more
- 02 Jun 2020 - 
TL;DR: In this article, a review of non-Hermitian classical and quantum physics can be found, with an overview of how diverse classical systems, ranging from photonics, mechanics, electrical circuits, acoustics to active matter, can be used to simulate non-hermitian wave physics.
Journal ArticleDOI

Optical surface waves in periodic layered media

Pochi Yeh, +2 more
- 15 Jan 1978 - 
TL;DR: In this paper, a generalized analysis of wave propagation in periodic layered media is applied to the special case of optical surface waves, confined to the interface between a periodic layered medium and a homogeneous medium, are formally analogous to electronic surface states in crystals.
Journal ArticleDOI

Optical waveguiding layers in LiNbO3 and LiTaO3

I.P. Kaminow, +1 more
- 01 Apr 1973 - 
TL;DR: In this paper, positive refractive index layers in LiNbO3 and LiTaO3 have been produced by a novel out-diffusion technique, and the index profiles for a variety of conditions are measured directly with an interference microscope.
References
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Book ChapterDOI

Ion implantation in semiconductors

James W. Mayer
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.

Ion Implantation in Semiconductors

James W. Mayer, +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI

Optical Waveguides Formed by Proton Irradiation of Fused Silica

E. Ronald Schineller, +2 more
- 01 Sep 1968 - 
TL;DR: Optical waveguides for laser applications by proton irradiated refractivity changes in fused silica were constructed by as discussed by the authors, where the waveguide was constructed by a proton-indirected laser.
Journal ArticleDOI

Isolation of junction devices in GaAs using proton bombardment

A.G. Foyt, +3 more
- 01 Apr 1969 - 
TL;DR: In this article, the average carrier concentration in the bombarded layer is less than 1011/cm3, and the layer thickness is about one micron for every 100 keV of proton energy.
Journal ArticleDOI

Observation of propagation cutoff and its control in thin optical waveguides

David J. Hall, +2 more
- 01 Aug 1970 - 
TL;DR: In this article, the first observation of optical cutoff in thin-film waveguides was reported, which is controlled through the electro-optic effect by applying an electric field across the epitaxial layer.
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S. Somekh, +4 more
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Isolation of junction devices in GaAs using proton bombardment

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Light waves in thin films and integrated optics.

P. K. Tien
- 01 Nov 1971 - 

Optical and electrical properties of proton‐bombarded p‐type GaAs

J. C. Dyment, +2 more
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Dielectric rectangular waveguide and directional coupler for integrated optics

E. A. J. Marcatili
- 01 Sep 1969 -