Journal ArticleDOI
Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
TLDR
The presence of predeposited or surface-accumulated Sn during MBE growth modifies the reconstruction of the (001)GaAs surface, as observed by RHEED, at coverages as low as 0.025 monolayer.About:
This article is published in Surface Science.The article was published on 1981-02-01. It has received 299 citations till now. The article focuses on the topics: Reflection high-energy electron diffraction & Monolayer.read more
Citations
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Journal ArticleDOI
Dynamics of film growth of GaAs by MBE from Rheed observations
TL;DR: In this paper, the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, GaAs and Ge.
Journal ArticleDOI
Collisions of atoms and ions with surfaces under grazing incidence
TL;DR: In this article, a detailed discussion of the scattering of fast atoms and ions from solid surfaces under a grazing angle of incidence is presented Theoretical and experimental results are used to demonstrate that collisions employing this scattering geometry provide interesting new phenomena and insights into atom-surface interactions.
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Migration-Enhanced Epitaxy of GaAs and AlGaAs
TL;DR: In this paper, the surface migration is effectively enhanced by evaporating Ga or Al atoms onto a clean GaAs surface under an As-free or low As pressure atmosphere, which is utilized by alternately supplying Ga and/or Al and AS4 to the substrate surface for growing atomically-flat GaAs-AlGaAs heterointerfaces, and also for growing high quality GaAs and AlGaAs layers at very low substrate temperatures.
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Diffraction from stepped surfaces: I. Reversible surfaces
Craig S. Lent,Philip I. Cohen +1 more
TL;DR: In this paper, the authors analyzed diffracted beam profiles from stepped surfaces that are reversible and obtained functional expressions for these angular profiles by a Markov method of treating a one-dimensional geometric distribution of steps.
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Molecular beam epitaxy
TL;DR: Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals.
References
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Journal ArticleDOI
Tin‐doping effects in GaAs films grown by molecular beam epitaxy
C. E. C. Wood,B. A. Joyce +1 more
TL;DR: The incorporation of Sn atoms as donor impurities in auto-epitaxial GaAsfilmsgrown from beams of Ga and As4 by the process of molecular beam epitaxy (MBE) has been studied in several ways as discussed by the authors, and the sticking coefficient of Sn, as measured directly by modulated beam techniques, is unity over a wide range of growth conditions, and the Sn diffusion rate is low up to the maximum growth temperatures used (820 K).
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Self‐masking selective epitaxy by molecular‐beam method
Seiichi Nagata,Tsuneo Tanaka +1 more
TL;DR: In this paper, epitaxial GaAs layers were grown selectively by self-masking on preferentially etched GaAs surfaces with a lateral accuracy of 0.1 μm.
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Influence of growth conditions on tin incorporation in GaAs grown by molecular beam epitaxy
TL;DR: In this article, the start, interruption, and end of growth of Sn-doped GaAs layers were investigated, using either the Auger electron spectroscopy (AES) measurement of tin accumulation on the surface, or C-V derived free-carrier concentration profile versus any of these growth parameters.