Journal ArticleDOI
Oscillatory behavior of the agglomeration rate in island copper films.
TLDR
The presence of a thin film of water vapor on the substrate surface impedes the agglomeration rate to a great extent while the presence of adsorbed substrate-surface contaminants decreases the energy for surface migration of islands of copper thereby increasing the aggLomersation rate.Abstract:
The post-deposition dc electrical-resistance increase of island copper films deposited on glass substrates at room temperature and at a pressure of 2\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}5}$ torr is studied. Films in the resistance range 10\char21{}95 M\ensuremath{\Omega}/\ensuremath{\square} were studied under different conditions to ascertain the role of residual gases and substrate-surface contaminants on the agglomeration rate. Mobility coalescence of small islands of Cu giving rise to an agglomerated film structure is assumed to explain the post-deposition resistance increase. It was found that the logarithm of the normalized resistance [ln(R/${R}_{0}$); ${R}_{0}$ is the initial resistance of the film at a time t=0] varies linearly as the logarithm of the time elapsed after the cessation of deposition. The constant of proportionality in the above relationship, termed the agglomeration rate m, shows an interesting oscillatory dependence on the initial resistance of the film and the condition of study. Nearly all the maxima and minima of m for two of the conditions studied in detail as a function of the initial resistance occur at about the same initial resistance values with the films having almost the same structure at these points. An argument is put forward based on the oscillatory nature of the effective tunneling barrier as a function of the island size to explain this unusual behavior. It is found that the presence of a thin film of water vapor on the substrate surface impedes the agglomeration rate to a great extent while the presence of adsorbed ${\mathrm{O}}_{2}$ and ${\mathrm{N}}_{2}$ decreases the energy for surface migration of islands of copper thereby increasing the agglomeration rate.read more
Citations
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Journal ArticleDOI
Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems
TL;DR: In this paper, experimental results on metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed, and special attention is given to recent results on strongly enhanced spin susceptibility and effective mass in low-disordered silicon MOSFETs.
Journal ArticleDOI
Temperature coefficient of the surface resistivity of two-dimensional island gold films
TL;DR: In this paper, two-dimensional island gold films (2D-I(Au)Fs) were prepared by a thermal evaporation technique where Corning 7059 glass slides, held at an ambient temperature during deposition, were used as substrates.
Journal ArticleDOI
Aging studies on discontinuous silver films in ultrahigh vacuum
Manjunatha Pattabi,N. Suresh,S.M. Chaudhari,A. Banerjee,Deodatta M. Phase,A. Gupta,K. Mohan Rao +6 more
TL;DR: The results of aging studies carried out on discontinuous silver films deposited on glass substrates held at room temperature in a vacuum of 2×10 −8 Torr are presented in this article.
Journal ArticleDOI
Low temperature behaviour of ion-beam-grown polymer-metal composite thin films
TL;DR: In this article, a detailed study of resistance vs. temperature behavior was performed over the range 12-300 K; current-voltage measurements as a function of temperature are also reported, an unusual ln (R ) ∞ T −1 dependence was found at low temperature.
Journal ArticleDOI
Effect of applied field and temperature on the aging of copper discontinuous films studied by the repeated deposition technique
TL;DR: In this paper, the effect of an applied DC electric field on the post-deposition resistance changes of island copper films on glass was investigated and an agglomeration rate was defined with the theory of mobility coalescence being invoked to explain the resistance increase of the films after deposition.
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