Journal ArticleDOI
Pattern partitioning for enhanced proximity-effect corrections in electron-beam lithography
Mihir Parikh,Donald E. Schreiber +1 more
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TLDR
New algorithms for judicious partitioning (or subdivision) of arbitrary lithographic patterns in order to achieve increased quality of proximity-effect correction as well as increased efficiency in the computation of such corrections are presented.Abstract:
This paper presents new algorithms for judicious partitioning (or subdivision) of arbitrary lithographic patterns in order to achieve increased quality of proximity-effect correction as well as increased efficiency in the computation of such corrections. Experimental results verifying the correctness of such algorithms are also presented.read more
Citations
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Journal ArticleDOI
Proximity effects in electron lithography: magnitude and correction techniques
TL;DR: The form and the magnitude of the proximity function and its extent are reviewed as evidenced by deviations in designed linewidths as well as methods to decrease the proximity effect.
Patent
Electron beam exposure method
TL;DR: In this paper, an electron beam exposure method incorporating a proximity effect correction for a pattern including large-area drawing patterns and small area drawing patterns is proposed. But the method is not suitable for large-scale drawing patterns.
Journal ArticleDOI
Patterning of structures by e-beam lithography and ion etching for gas sensor applications
P. Durina,A. Bencurova,A. Konecnikova,Ivan Kostic,Katia Vutova,E Koleva,G. M. Mladenov,P Kus,A Plecenik +8 more
TL;DR: In this paper, a method of preparation of nanometer structures for a gas detector based on e-beam lithography and ion etching of a thin TiO2 film was presented.
Proceedings ArticleDOI
Experimental Research on Silicon Optical Waveguide and Focus Coupling Grating
TL;DR: In this paper, the bottom surface roughness of waveguide etching region and its absorption spectrum are obtained through CLSM and IR-Microscope respectively, and the focus grating with lower tolerances are optimized.
References
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Journal ArticleDOI
Self‐consistent proximity effect correction technique for resist exposure (SPECTRE)
TL;DR: In this article, a self-consistent proximity effect correction technique for resist exposure (SPECTRE) was developed to compute, for any given pattern, the corrections to the incident electron exposure which must be applied in order to obtain uniform (incident plus backscattered) exposure in the resist.
Journal ArticleDOI
Proximity effects in electron lithography: magnitude and correction techniques
TL;DR: The form and the magnitude of the proximity function and its extent are reviewed as evidenced by deviations in designed linewidths as well as methods to decrease the proximity effect.
Journal ArticleDOI
Corrections to proximity effects in electron beam lithograhy. III. Experiments
TL;DR: In this article, a self-consistent formulation and the algorithms for computation described in the two preceeding papers have been used for the automatic computation of corrections to the incident electron exposure for an arbitrary pattern is described.
Journal ArticleDOI
Proximity effect correction in electron‐beam lithography
T. Kato,Y. Watakabe,H. Nakata +2 more
TL;DR: In this paper, an experimental and theoretical study on a correction method of the proximity effect which contains the consideration of the three-dimensional profile of a resist is presented. But the work is limited to two-dimensional exposure intensity distribution (EID).
Journal ArticleDOI
Proximity correction enhancements for 1-µm dense circuits
TL;DR: It is shown that in the case of dense circuits with linewidths of about 1 µm or smaller, two enhancements to the proximity correction technique can be easily implemented, and a new type of algorithm for forming subsets of the design to perform self-consistent dose correction is applied to LSI chip data for dense circuits.