Showing papers in "Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena in 2017"

Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals

Abstract: Schottky diodes based on ( 2 ¯ 01) β-Ga2O3 substrates and (010) β-Ga2O3 homoepitaxial layers were formed using five different Schottky metals: W, Cu, Ni, Ir, and Pt. Based on a comparison of the effects of different wet chemical surface treatments on the Ga2O3 Schottky diodes, it was established that a treatment with an organic solvent, cleaning with HCl and H2O2, and rinsing with deionized water following each step yielded the best results. Schottky barrier heights calculated from current–voltage (I-V) and capacitance–voltage (C-V) measurements of the five selected metals were typically in the range of 1.0–1.3 and 1.6–2.0 eV, respectively, and showed little dependence on the metal work function. Several diodes also displayed inhomogeneous Schottky barrier behavior at room temperature. The results indicate that bulk or near-surface defects and/or unpassivated surface states may have a more dominant effect on the electrical behavior of these diodes compared to the choice of Schottky metal and its work func...

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems.

Abstract: Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures.

Review Article: Flow battery systems with solid electroactive materials

Abstract: Energy storage is increasingly important for a diversity of applications. Batteries can be used to store solar or wind energy providing power when the Sun is not shining or wind speed is insufficient to meet power demands. For large scale energy storage, solutions that are both economically and environmentally friendly are limited. Flow batteries are a type of battery technology which is not as well-known as the types of batteries used for consumer electronics, but they provide potential opportunities for large scale energy storage. These batteries have electrochemical recharging capabilities without emissions as is the case for other rechargeable battery technologies; however, with flow batteries, the power and energy are decoupled which is more similar to the operation of fuel cells. This decoupling provides the flexibility of independently designing the power output unit and energy storage unit, which can provide cost and time advantages and simplify future upgrades to the battery systems. One major ch...

1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers

Abstract: Vertical rectifiers fabricated on epi Ga2O3 on bulk β-Ga2O3 were subject to 1.5 MeV electron irradiation at fluences from 1.79 × 1015 to 1.43 × 1016 cm−2 at a fixed beam current of 10−3 A. The electron irradiation caused a reduction in carrier concentration in the epi Ga2O3, with a carrier removal rate of 4.9 cm−1. The 2 kT region of the forward current–voltage characteristics increased due to electron-induced damage, with an increase in diode ideality factor of ∼8% at the highest fluence and a more than 2 order of magnitude increase in on-state resistance. There was a significant reduction in reverse bias current, which scaled with electron fluence. The on/off ratio at −10 V reverse bias voltage was severely degraded by electron irradiation, decreasing from ∼107 in the reference diodes to ∼2 × 104 for the 1.43 × 1016 cm−2 fluence. The reverse recovery characteristics showed little change even at the highest fluence, with values in the range of 21–25 ns for all rectifiers.

Oxidation and oxidative vapor-phase etching of few-layer MoS2

Abstract: Understanding oxidation of layered chalcogenide semiconductors is important for device processing, as oxidation can be both an intentional and unintentional result of processing steps. Here, the authors investigate chemical and morphological changes in mechanically exfoliated few-layer MoS2 in oxidizing and inert environments using different microscopies (optical, scanning electron, and atomic force) and spectroscopy (Raman, x-ray photoelectron, and Auger electron) techniques. The environments studied were oxygen, oxygen and water vapor, argon, argon and water vapor, and ultraviolet-generated ozone at temperatures from 25 to 550 °C. Oxidation at low temperatures resulted in the formation of a condensed molybdenum oxide phase and sulfur trioxide gas. At sufficiently elevated temperatures, all the products of oxidation volatilize, resulting in a vapor-phase etch. The kinetics of oxidation and etching depended upon the annealing gas, temperature, time, and the number of layers of MoS2. Conditions can be sele...

Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams

Abstract: Focused ion beam nanoscale synthesis has emerged as a critical tool for selected area nanofabrication. Helium and neon ion beams from the gas field ion source have recently demonstrated unparalleled resolution among other scanning ion beams. In this review, the authors focus on the nanoscale synthesis applications for these ion species which have been demonstrated to date. The applications and recent work can broadly be grouped into the following categories: (1) Monte Carlo simulations, (2) direct-write milling or sputtering, (3) ion beam lithography, (4) selective ion implantation or defect introduction, and (5) gas-assisted processing. A special emphasis is given toward using He+ and Ne+ for the processing of two dimensional materials, as several groups have demonstrated promising results. Finally, the authors will discuss the future outlook of He+ and Ne+ nanoprocessing techniques and applications.

Annealing of dry etch damage in metallized and bare (-201) Ga2O3

Abstract: The surface of single-crystal (-201) oriented β-Ga2O3 was etched in BCl3/Ar inductively coupled plasmas under conditions (an excitation frequency of 13.56 MHz, a source power of 400 W, and a dc self-bias of −450 V) that produce removal rates of ∼700 A min−1. Annealing at 400 and 450 °C was carried out after etching on Ni/Au Schottky diodes formed on the surface either before or after the annealing step. Current–voltage (I–V) measurements were used to extract the Schottky barrier height (Φ), diode ideality factor (n), and reverse breakdown voltage (VRB) for plasma damaged diodes after annealing. Annealing at 450 °C was found to essentially restore the values of Φ, n, and VRB to their reference (unetched) values on samples metallized after etching and annealing. Thermal annealing at either temperature of metallized diodes degraded their reverse breakdown voltage, showing that Ni/Au is not stable on β-Ga2O3 at these temperatures. Photoluminescence revealed a decrease in total emission intensity in the near b...

Review Article: Active scanning probes: A versatile toolkit for fast imaging and emerging nanofabrication

Abstract: With the recent advances in the field of nanotechnology, measurement and manipulation requirements at the nanoscale have become more stringent than ever before. In atomic force microscopy, high-speed performance alone is not sufficient without considerations of other aspects of the measurement task, such as the feature aspect ratio, required range, or acceptable probe-sample interaction forces. In this paper, the authors discuss these requirements and the research directions that provide the highest potential in meeting them. The authors elaborate on the efforts toward the downsizing of self-sensed and self-actuated probes as well as on upscaling by active cantilever arrays. The authors present the fabrication process of active probes along with the tip customizations carried out targeting specific application fields. As promising application in scope of nanofabrication, field emission scanning probe lithography is introduced. The authors further discuss their control and design approach. Here, microactua...

In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

Abstract: A physical simulation procedure was used to describe the processes behind the operation of devices based on TiN/Ti/HfO2/W structures. The equations describing the creation and destruction of conductive filaments formed by oxygen vacancies are solved in addition to the heat equation. The resistances connected with the metal electrodes were also considered. Resistive random access memories analyzed were fabricated, and many of the characteristics of the experimental data were reproduced with accuracy. Truncated-cone shaped filaments were employed in the model developed with metallic-like transport characteristics. A hopping current was also taken into account to describe the electron transport between the filament tip and the electrode. Hopping current is an essential component in the device high resistance state.

Fabrication of hard x-ray zone plates with high aspect ratio using metal-assisted chemical etching

Abstract: Fresnel zone plates are widely used as nanofocusing optics for x-ray microscopy, where the spatial resolution is set by the width of the finest rings while the efficiency is set by their thickness. This leads to the requirement for high aspect ratio nanofabrication. Metal-assisted chemical etching and atomic layer deposition has already been used to produce high aspect ratio zone plate structures on unthinned silicon wafers. The authors demonstrate here a substantial improvement on the achieved aspect ratio up to a value of 500:1, by producing 16 nm wide platinum zones with thicknesses up to 8 μm. At the same time, the silicon substrate was thinned to 15 μm as required for a practically useful optic. First tests have shown 4.8% diffraction efficiency using 20 keV x rays. This x-ray focusing efficiency is higher than most Fresnel zone plates for this photon energy and near what has been achieved with multilayer-coated Kirkpatrick–Baez mirrors, and multilayer Laue lenses. Hard x-ray zone plates offer the advantages of easy alignment, energy tunability, and one can make many zone plates in a batch on a single silicon chip.

Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

Abstract: The use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10−5 Ω cm2 were achieved after 600 °C annealing, respectively. The conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3

Abstract: Wide bandgap dielectrics are needed as gate insulators and surface passivation layers on the emerging electronic oxide Ga2O3. X-ray photoelectron spectroscopy was used to determine the valence band offset at LaAl2O3 (LAO)/β-Ga2O3 heterointerfaces. LaAl2O3 was deposited by RF magnetron sputtering onto bulk Ga2O3 crystals. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy to be 4.6 eV for Ga2O3 and 6.4 eV for LAO. The valence band offset was determined to be −0.21 ± 0.02 eV (staggered gap, type II alignment) for LAO on Ga2O3. This leads to a conduction band offset of 2.01 ± 0.60 eV for LaAO with Ga2O3. Thus, LAO provides excellent electron confinement but not hole confinement in LAO/Ga2O3 heterostructures.

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

Abstract: Transition metal dichalcogenides (TMDs) have attracted intensive attention due to their atomic layer-by-layer structure and moderate energy bandgap. However, top-gated transistors were only reported in a limited number of research works, especially transistors with a high-k gate dielectric that are thinner than 10 nm because high-k dielectrics are difficult to deposit on the inert surface of the sulfide-based TMDs. In this work, the authors fabricated and characterized top-gated, few-layer MoS2 transistors with an 8 nm HfO2 gate dielectric. The authors show that the cleaning effect of ultrahigh vacuum annealing before high-k deposition results in significantly reduced gate leakage current of HfO2, and they show that N2 or a forming gas anneal after device fabrication affects the threshold voltage, drive current, dielectric leakage, and C-V frequency dependence. This work demonstrates how the fabrication process can affect the yield and the electrical characterization of top-gated TMD transistors, which in...

Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Abstract: For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III–Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In0.52Al0.48As and In0.53Ga0.47As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter–property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

Inductively coupled plasma etching of bulk, single-crystal Ga2O3

Abstract: High ion density dry etching of bulk single-crystal β-Ga2O3 was carried out as a function of source power (100–800 W), chuck power (15–400 W), and frequency (13.56 or 40 MHz) in inductively coupled plasma (ICP) systems using Cl2/Ar or BCl3/Ar discharges. The highest etch rate achieved was ∼1300 A min−1 using 800 W ICP source power and 200 W chuck power (13.56 MHz) with either Cl2/Ar or BCl3/Ar. This is still a comfortably practical set of conditions, where resist reticulation does not occur because of the effective He backside cooling of the sample in the tool and the avoidance of overly high powers in systems capable of 2000 W of source power. The etching is ion-assisted and produces anisotropic pattern transfer. The etched surface may become oxygen-deficient under strong ion-bombardment conditions. Schottky diodes fabricated on these surfaces show increased ideality factors (increasing from 1.00 to 1.29 for high power conditions) and reduced barrier heights (1.1 on reference diodes to 0.86 eV for etched...

Thermal nanoimprint to improve the morphology of MAPbX3 (MA = methylammonium, X = I or Br)

Abstract: Perovskites have high potential for future electronic devices, in particular, in the field of opto-electronics. However, the electronic and optic properties of these materials highly depend on the morphology and thus on the preparation; in particular, highly crystalline layers with large crystals and without pinholes are required. Here, nanoimprint is used to improve the morphology of such layers in a thermal imprint step. Two types of material are investigated, MAPbI3 and MAPbBr3, with MA being methylammonium, CH3NH3+. The perovskite layers are prepared from solution, and the crystal size of the domains is substantially increased by imprinting them at temperatures of 100–150 °C. Although imprint is performed under atmospheric conditions which, in general, enhances the degradation, the stamp that covers the layer under elevated temperature is able to protect the perovskite largely from decomposition. Comparing imprinting experiments with pure annealing at a similar temperature and time proves this. Furthe...

Employing refractive beam shaping in a Lloyd's interference lithography system for uniform periodic nanostructure formation

Abstract: Uniform periodic structure formation over a large sample area has been challenging in laser interference lithography (LIL) mainly due to the Gaussian intensity distribution inherent to a laser beam. In this work, refractive beam shaping devices are applied in a Lloyd's interferometer to create a flat-top light field (2.8% intensity variation over an area of 20 × 20 cm2) for wafer-scale nanopatterning. Around 10−2 variation in fill factors are obtained for all the reported one dimensional and two dimensional periodic structures across a 2-in. wafer, which is 1 order of magnitude lower than the values obtained for the samples exposed to a Gaussian light field. The proposed LIL system also allows gradual light field transitions from the Gaussian, super-Gaussian, and flat-top to the inverse-Gaussian by simply adjusting the spot size of the laser incident to the beam shaper. The authors believe that the proposed LIL system can be applied for a variety of applications that benefit from the nature of periodic na...

Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors

Abstract: The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for semiconductor composites with a wide range of potential optical, electrical, and thermal properties, making them useful for applications in thermoelectrics, tunnel junctions, phototconductive switches, and as contact layers. The similarities in crystal structures and lattice constants allow them to be epitaxially incorporated into III-V semiconductors with low defect densities and high overall film quality. A variety of growth techniques for these composites with be discussed, along with their growth mechanisms and current applications, with a focus on more recent developments. Results obtained from molecular beam epitaxy film growth will be highlighted, although other growth techniques will be mentioned. Optical and electronic characterization along with the microscopy analysis of these composites is presented to demonstrate influence of nanoinclusion composition and morphology on the resulting properties of the composite material.

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Abstract: A semiempirical model describing the influence of interface states on characteristics of gate capacitance and drain resistance versus gate voltage of top gated graphene field effect transistors is presented. By fitting our model to measurements of capacitance–voltage characteristics and relating the applied gate voltage to the Fermi level position, the interface state density is found. Knowing the interface state density allows us to fit our model to measured drain resistance–gate voltage characteristics. The extracted values of mobility and residual charge carrier concentration are compared with corresponding results from a commonly accepted model which neglects the effect of interface states. The authors show that mobility and residual charge carrier concentration differ significantly, if interface states are neglected. Furthermore, our approach allows us to investigate in detail how uncertainties in material parameters like the Fermi velocity and contact resistance influence the extracted values of interface state density, mobility, and residual charge carrier concentration.

Patterning of electrically tunable light-emitting photonic structures demonstrating bound states in the continuum

Abstract: The authors report a scalable process to fabricate electrically tunable light-emitting photonic structures made of optically active and electrically conductive erbium-doped zinc oxide (Er:ZnO) deposited by magnetron sputtering. Such structures are expected to produce a dramatic amplification of the erbium fluorescence due to enhanced light-matter coupling at topologically protected states called bound states in the continuum (BIC). Our patterning approach circumvents roughening of the Er:ZnO during plasma etching by employing a metallic mask and a lift-off process. Etching with a polymer mask resulted in an unacceptable increase of the surface roughness, from a root mean square (RMS) roughness of 0.5 nm for the as-deposited sample to a RMS roughness of 25 nm after etching. Such surface roughness proves detrimental to the photonic crystal resonances and to the BIC mode in particular. Using a metallic mask instead allowed for the etching of Er:ZnO with a modest roughness increase (RMS value 4.1 nm). This pa...

Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Abstract: The authors report on the achievement of full-color nanowire light-emitting diodes (LEDs), with the incorporation of InGaN/AlGaN nanowire heterostructures grown directly on the Si (111) substrates by molecular beam epitaxy. Multiple color emission across nearly the entire visible wavelength range can be realized by varying the In composition in the InGaN quantum dot active region. Moreover, multiple AlGaN shell layers are spontaneously formed during the growth of InGaN/AlGaN quantum dots, leading to the drastically reduced nonradiative surface recombination, and enhanced carrier injection efficiency. Such core–shell nanowire structures exhibit significantly increased carrier lifetime and massively enhanced photoluminescence intensity compared to conventional InGaN/GaN nanowire LEDs. A high color rendering index of ∼98 was recorded for white-light emitted from such phosphor-free core–shell nanowire LEDs.

Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation

Abstract: The hypothetical mechanism of bottom profile degradation, such as distortion and twisting in high aspect ratio feature etching, was verified based on the pattern transfer observation of etched pattern. The authors mainly focused on trench pattern sample to make the investigation easier, that is, direct observation of the sidewall roughness, using an atomic force microscope, as well as analysis of the depth dependence of pattern deformation in high aspect ratio trench etching. Using Fourier transformation analysis for the trench sidewall roughness, it was found that lower spatial frequency component of the mask's sidewall roughness is amplified at the bottom region of the trench and that higher spatial frequency component of over 10 μm−1 disappears. However, the higher spatial frequency component is transferred directly to the upper sidewall of the trench. The observation of the pattern deformation profile, as a function of etch depth, revealed that the ratio of line width roughness to line edge roughness ...

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

Abstract: The authors have investigated different methods for preparing the surfaces of freestanding, Ga-polar, hydride vapor-phase epitaxy grown GaN substrates to be used for homoepitaxial GaN growth by plasma-assisted molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy and secondary ion mass spectroscopy, respectively, were used to characterize the microstructure and to measure the concentrations of impurities unintentionally incorporated in the MBE-grown homoepitaxial GaN layers. Heating Ga-polar substrates to ∼1100 °C is as effective as a wet chemical clean for reducing impurity concentrations of oxygen, silicon, and carbon. The combination of an aggressive ex situ wet chemical clean with in situ Ga deposition and thermal desorption results in homoepitaxial GaN layer growth with very low residual impurity concentrations and without generating additional threading dislocations.

2D/3D image charge for modeling field emission

Abstract: Analytic image charge approximations exist for planar and spherical metal surfaces but approximations for more complex geometries, such as the conical and wirelike structures characteristic of field emitters, are lacking. Such models are the basis for the evaluation of Schottky lowering factors in equations for current density. The development of a multidimensional image charge approximation, useful for a general thermal-field emission equation used in space charge studies, is given and based on an analytical model using a prolate spheroidal geometry. A description of how the model may be adapted to be used with a line charge model appropriate for carbon nanotube and carbon fiber field emitters is discussed.

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Abstract: The oxide/semiconductor interface state density (Dit) in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) structures with gate oxides grown by atomic layer deposition at low deposition temperature is analyzed in this work. MOS-HEMT structures with Al2O3 gate oxide were deposited at 100 and 300 °C using trimethylaluminum precursor and H2O and O3 oxidation agents. The structures were found to show negative net charge at oxide/barrier interface with density (Nint) of 1013 cm−2, which was attributed to the reduction of barrier surface donor density (NDS). Dit was determined using capacitance transient techniques, and the results were assessed by the simulations of the capacitance–voltage characteristics affected by interface traps. The results indicate a lower interface quality of the sample with Al2O3 grown using O3 agent compared to those with H2O, even though the former provided lowest gate leakage among the analyzed structures. Moreover, to uncover the NDS nature, Dit...

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Abstract: This paper reports on the effects of interface states and near interface traps on the behavior of GaN and SiC transistors employing SiO2 as gate dielectric, emphasizing the role of these interfacial charged traps on the threshold voltage stability of the devices. Capacitance, conductance, and current measurements, carried out as a function of the frequency, were used to characterize the GaN- and SiC-metal-oxide-semiconductor systems. In these systems, although postoxide deposition annealing treatments reduce the interface states density, the presence of near interface traps can induce an anomalous behavior of the current conduction, accompanied by a threshold voltage instability. The transfer characteristics of the transistors acquired in an appropriate bias range enabled to quantify the density of these traps in the order of 1011 cm−2.

Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

Abstract: Epitaxial layers of Ge1−xSnx with Sn compositions up to 18.5% were grown on Ge (100) substrates via solid-source molecular beam epitaxy. Crystallographic information was determined by high resolution x-ray diffraction, and composition was verified by Rutherford backscattering spectrometry. The surface roughness, measured via atomic force microscopy and variable angle spectroscopic ellipsometry, was found to scale with the layer thickness and the Sn concentration, but not to the extent of strain relaxation. In addition, x-ray rocking curve peak broadening was found not to trend with strain relaxation. The optical response of the Ge1−xSnx alloys was measured by spectroscopic ellipsometry. With increasing Sn content, the E1 and E1 + Δ1 critical points shifted to lower energies, and closely matched the deformation potential theory calculations for both pseudomorphic and relaxed Ge1−xSnx layers. The dielectric functions of the high Sn and strain relaxed material were similar to bulk germanium, but with slightl...

Unexpected validity of Schottky's conjecture for two-stage field emitters: A response via Schwarz–Christoffel transformation

Abstract: The electric field in the vicinity of the top of an emitter with a profile consisting of a triangular protrusion on an infinite line is analytically obtained when this system is under an external uniform electric field. The same problem is also studied when the profile features a two-stage system, consisting of a triangular protrusion centered on the top of a rectangular one on a line. These problems are approached by using a Schwarz–Christoffel conformal mapping, and the validity of Schottky's conjecture (SC) is discussed. The authors provide an analytical proof of SC when the dimensions of the upper-stage structure are much smaller than those of the lower-stage structure, for large enough aspect ratios and considering that the field enhancement factor (FEF) of the rectangular structure is evaluated on the center of the top of the structure, while the FEF of the triangular stage is evaluated near the upper corner of the protrusion. The numerical solution of our exact equations shows that SC may remain va...

Proximity effect correction in electron-beam lithography based on computation of critical-development time with swarm intelligence

Abstract: Electron-beam lithography (EBL) is an important technique in manufacturing high-resolution nanopatterns for broad applications. However, the proximity effect in EBL can degrade the pattern quality and, thus, impact the performance of the applications greatly. The conventional proximity effect correction (PEC) methods, which employ computationally intensive cell or path removal method for development simulation, are very computational lengthy, especially for complex and large-area patterns. Here, the authors propose a novel short-range PEC method by transforming the evaluation of pattern feasibility into the shortest path problem based on the concept of critical-development time. The authors combine this evaluation algorithm with the swarm intelligence which mimics the natural collective behavior of animals to optimize the design of electron dose distribution in EBL. The PEC algorithm is applied for pattern fabrication for U-shaped split-ring resonator and produces optimized exposure pattern that shows exc...

Electron extraction electrode for a high-performance electron beam from carbon nanotube cold cathodes

Abstract: The effect of an electron extraction electrode on electron emission for a high-performance electron beam was studied using vertically aligned carbon nanotube emitters as a cold cathode. For the lower electron emission regime (anode current less than 1 mA), the gate electrode structure and materials used had little effect on the electron emission current. However, at the higher electron emission regime (anode current higher than 1 mA), the gate electrode materials and structure do begin to deviate from an ideal Fowler–Nordheim plot by the thermal and electrostatic load on the gate electrode, especially for the small cathode area. The gate mesh bends upward under a higher current load, which then increases the gate leakage current. The upward bending in the gate mesh electrode could reduce the effective electric field by increasing the gate to cathode distance, resulting in saturation of the electron emission current. For higher electron emission currents on the anode, a gate electrode comprising a lower th...