Patent
Phase shift mask for preventing haze
TLDR
In this article, residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of the surface of the phase shift mask.Abstract:
Disclosed is a phase shift mask. Residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of a surface of the phase shift mask. Diffusion of the residual ions into the surface of the mask is suppressed during a photomask wet cleaning process in order to prevent the haze.read more
Citations
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Patent
Photomask blank manufacturing method and photomask manufacturing method
TL;DR: In this paper, a treatment is performed to modify a main surface of the thin film in advance so that when exposure light having a wavelength of 200 nm or less is accumulatively irradiated on a thin film pattern of a photomask to be produced by patterning the thin-film, the transfer characteristic of the pattern does not change more than a predetermined degree.
Patent
Light pattern exposure method, photomask, and photomask blank
Hiroki Yoshikawa,Yukio Inazuki,Hideo Kaneko,Ryuji Koitabashi,Yosuke Kojima,Takashi Haraguchi,Tomohito Hirose +6 more
TL;DR: A light pattern exposure method is by irradiating ArF excimer laser light to a resist film through a photomask as mentioned in this paper, which includes a transparent substrate and a pattern of optical film of a material comprising a transition metal, silicon, nitrogen and oxygen.
Patent
Chromeless phase-shifting photomask with undercut rim-shifting element
Brent A. Anderson,Jed H. Rankin +1 more
TL;DR: In this article, a phase shifting photomask with a self-aligned undercut rim-shifting element and methods for its manufacture are provided. But they do not specify a manufacturing procedure for phase shifting.
Patent
Phase shift mask blank, phase shift mask, and blank preparing method
Inazuki Yukio,Kosaka Takuro +1 more
TL;DR: In this paper, the phase shift mask blank is composed of a silicon base material consisting of silicon, nitrogen and optionally oxygen, and has a thickness of up to 70 nm, and provides a warpage change up to 0.2 µm in a central region of a surface of the substrate before and after the deposition of phase shift film on the substrate.
Patent
Method of fabricating halftone phase shift mask
TL;DR: In this article, a method of fabricating a halftone phase shift mask is proposed, comprising of forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate.
References
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Patent
Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
Akihiko Isao,Ryoichi Kobayashi,Nobuyuki Yoshioka,Yaichiro Watakabe,Junji Miyazaki,Kouichiro Narimatsu,Shigenori Yamashita +6 more
TL;DR: In this paper, the second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide (SILSO), or a moxybdenium silicide oxide (MSO), or chromium oxide, or a chromium carbide oxide (CNO) film.
Patent
Halftone phase shift mask blank, and halftone phase shift mask
TL;DR: In this paper, a halftone phase shift mask blank is provided in which the transmittance can be easily controlled without varying phase difference by controlling the refractive index of the transmissive layer to a desired value in a shifter layer.
Patent
Lithography mask blank
TL;DR: In this paper, the ammonium ion production preventing layer for preventing production of ammonium ions is formed on the nitrogen-containing thin film or at least at a surface portion of the nitrogen containing thin film and which is exposed on the surface of the lithography mask after the mask is manufactured.
Patent
Phase shift mask and blank to be used for the same and their production
Kenta Hayashi,健太 林 +1 more
TL;DR: In this article, the phase shift mask is used for an exposure device using i rays and KrF excimer laser as light sources at the time of using the mask using a silicon oxide film as a phase shift layer and enables the effective utilization of energy for exposure and the blank to be used for this mask and process for production of such mask and blank.
Patent
Method for forming the phase shifting mask
TL;DR: In this paper, a method for manufacturing a phase shift mask is provided to simplify processes and to reduce manufacturing costs by forming a spacer at the sidewall of a light shielding pattern.