Patent
Phase shift mask and blank to be used for the same and their production
Kenta Hayashi,健太 林 +1 more
TLDR
In this article, the phase shift mask is used for an exposure device using i rays and KrF excimer laser as light sources at the time of using the mask using a silicon oxide film as a phase shift layer and enables the effective utilization of energy for exposure and the blank to be used for this mask and process for production of such mask and blank.Abstract:
PURPOSE: To provide the phase shift mask which has high reliability as the phase shift mask for an exposure device using i rays and KrF excimer laser as light sources at the time of using the phase shift mask using a silicon oxide film as a phase shift layer and enables the effective utilization of energy for exposure and the blank to be used for this mask and process for production of such mask and blank. CONSTITUTION: A phase shift film has at least a transparent substrate 1 and the phase shift layer 3 consisting of oxide of silicon. The phase shift layer 3 of this phase shift mask is subjected to a heat treatment under a reduced pressure, more preferably under the reduced pressure and in an inert gaseous atmosphere after formation of the phase shift layer 3. COPYRIGHT: (C)1994,JPO&Japioread more
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Patent
Photomask and its manufacture
Atsushi Shioda,淳 潮田 +1 more
TL;DR: In this article, the authors proposed a method to enhance the transmittance of a halftone phase shift film and the controllability of phase difference, to enable formation of good minute patterns, and to enhance durability, by forming a protective film chemically stable to ozone generated during exposure.
Patent
Method for manufacturing phase shift mask blank, method for manufacturing phase shift mask, and method for transferring pattern
TL;DR: In this article, a method for manufacturing a halftone phase shift mask blank having a light translucent film on a transparent substrate was proposed, in which a translucent film containing nitrogen, metal and silicon was formed by sputtering a target containing 70 to 95% silicon and metal in an atmosphere containing nitrogen on the transparent substrate.
Patent
Phase shifter film and process for the same
TL;DR: In this article, a halftone type phase shift mask, a reactive gas introduction inlet and an inert gas introduction INlet are provided so as to introduce the respective gases separately and by using a reactive low-throw sputtering method a molybdenum silicide based phase shifter film is formed.
Patent
Phase shift mask for preventing haze
TL;DR: In this article, residual ions, which are considered a factor of occurrence of haze which is a growth defect of a surface of a photomask during a photolithography step of a wafer process, are controlled in order to change the content of the surface of the phase shift mask.
Patent
Phase shifter film and production of same
TL;DR: In this article, a phase shifter film was formed by using a reactive long slow spattering device with a low pressure vacuum tank, which was used to obtain a half tone phase shift mask applicable for ArF laser or KrF laser by the user of molybdenum silicide.