Journal ArticleDOI
Photoluminescence Study of Carbon Doped Gallium Arsenide
TLDR
The photoluminescence studies of the carbon doped epitaxial gallium arsenide revealed that a pair of emission bands at 1.493 eV and 1.490 eV (D-A) were attributed to the carbon acceptor on arsenic site as discussed by the authors.Abstract:
The photoluminescence studies of the carbon doped epitaxial gallium arsenide revealed that a pair of emission bands at 1.493 eV (B-A) and 1.490 eV (D-A) were attributed to the carbon acceptor on arsenic site. The sharp doublet emission lines at 1.5127 eV and 1.4937 eV were identified with the exciton recombination bound to a neutral carbon acceptor and the two-hole transition in which the neutral carbon acceptor is left in an excited state, respectively. From the observation of these emissions, the 1S3/2 ground and 2S3/2 excited state energies of carbon acceptor were found to be 26.5 meV and 7.5 meV above the valence band edge, respectively. The results were supported by the effective mass arguments and by the dependence of the binding energy on the atomic number of impurities.read more
Citations
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Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
TL;DR: Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament as discussed by the authors, which was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors.
Journal ArticleDOI
Characterization of high-purity Si-doped molecular beam epitaxial GaAs
B. J. Skromme,S. S. Bose,Byeongdu Lee,T. S. Low,T. R. Lepkowski,R. Y. DeJule,G. E. Stillman,James C. M. Hwang +7 more
TL;DR: In this paper, high purity, lightly Si-doped GaAs layers have been characterized using variabletemperature Hall effect and C-V measurements, photothermal ionization spectroscopy, low-temperature photoluminescence (PL), and deep level transient spectroscope (DLTS).
Characterization of high purity Si-doped molecular beam epitaxial GaAs
B. J. Skromme,S. S. Bose,Byeongdu Lee,T. S. Low,T. R. Lepkowski,R. Y. DeJule,G. E. Stillman,James C. M. Hwang +7 more
TL;DR: In this paper, high purity, lightly Si-doped GaAs layers have been characterized using variabletemperature Hall effect and C-V measurements, photothermal ionization spectroscopy, low-temperature photoluminescence (PL), and deep level transient spectroscope (DLTS).
Journal ArticleDOI
Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
TL;DR: In this paper, photoluminescence measurements at 4.2 K were used to investigate the nonuniform distribution of deep levels in semi-insulating (S.I.) LEC GaAs.
Journal ArticleDOI
Photoluminescence identification of the C and Be acceptor levels in InP
TL;DR: In this article, a comparison of the low temperature photoluminescence spectra of these deliberately doped samples was made to similar spectra for undoped high purity InP grown by LPE, PH3-VPE, and LEC techniques in order to identify the residual acceptors in the undoped samples.
References
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Journal ArticleDOI
Gallium Arsenide and Related Compounds
TL;DR: The maturity of this work on III-V compounds is clear from this volume of papers from the fourth international conference, at Boulder, Colorado as discussed by the authors, and many areas prominent at earlier conferences are largely absent: bulk crystal growth, vapour phase epitaxy, light and infrared emitting diodes, lasers, mixers and varactors.
Journal ArticleDOI
Shallow acceptor luminescence in GaAs grown by liquid phase epitaxy
TL;DR: Two pairs of photoluminescence (PL) emission bands between 1.494 and 1.480 eV have been observed at 4.2°K from high purity, undoped GaAs layers grown by liquid phase epitaxy as discussed by the authors.