Journal ArticleDOI
Photon-Radiative Recombination of Electrons and Holes in Germanium
TLDR
The spectral distribution of photon generation for the photon-radiative recombination of electrons and holes in germanium is determined from known optical properties by application of the principle of detailed balance.Abstract:
The spectral distribution of the rate of photon generation for the photon-radiative recombination of electrons and holes in germanium is determined from known optical properties by application of the principle of detailed balance. Quantities characterizing the process are evaluated: The thermal equilibrium recombination rate at 300\ifmmode^\circ\else\textdegree\fi{}K is 1.57\ifmmode\times\else\texttimes\fi{}${10}^{13}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ ${\mathrm{sec}}^{\ensuremath{-}1}$, which corresponds to a recombination cross section of 2.9\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}21}$ ${\mathrm{cm}}^{2}$ and a decay time for a small disturbance in carrier concentration in intrinsic material of 0.75 sec. The extension to the steady-state case of added current carriers is given, and estimates are included of the dependence of the quantities on temperature.read more
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Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
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Semiconducting and other major properties of gallium arsenide
TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Journal ArticleDOI
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Hui Fang,Corsin Battaglia,Carlo Carraro,Slavomír Nemšák,Burak Ozdol,Burak Ozdol,Jeong Seuk Kang,Hans A. Bechtel,Sujay B. Desai,Florian Kronast,Ahmet Unal,G. Conti,C. Conlon,Gunnar K. Pálsson,Michael C. Martin,Andrew M. Minor,Andrew M. Minor,Charles S. Fadley,Eli Yablonovitch,Roya Maboudian,Ali Javey +20 more
TL;DR: Artificial semiconductor heterostructures built from single-layer WSe2 and MoS2 observe a large Stokes-like shift of ∼100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment having spatially direct absorption but spatially indirect emission.
Journal ArticleDOI
Reciprocity relation between photovoltaic quantum efficiency and electroluminescent emission of solar cells
TL;DR: In this article, the spectral and angular dependences of the electroluminescence of solar cells and light emitting diodes were analyzed and a rigorous proof for a reciprocity theorem was given.
Journal ArticleDOI
Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit
TL;DR: In this paper, the authors show that a great solar cell also needs to be a great light-emitting diode, which is a necessity for approaching the Shockley-Queisser (SQ) efficiency limit.