Journal ArticleDOI
Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
TLDR
In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.Abstract:
In order to find an upper theoretical limit for the efficiency of p‐n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of hole‐electron pairs is radiative as required by the principle of detailed balance. The efficiency is also calculated for the case in which radiative recombination is only a fixed fraction fc of the total recombination, the rest being nonradiative. Efficiencies at the matched loads have been calculated with band gap and fc as parameters, the sun and cell being assumed to be blackbodies with temperatures of 6000°K and 300°K, respectively. The maximum efficiency is found to be 30% for an energy gap of 1.1 ev and fc = 1. Actual junctions do not obey the predicted current‐voltage relationship, and reasons for the difference and its relevance to efficiency are discussed.read more
Citations
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Journal ArticleDOI
Design Rules for Donors in Bulk‐Heterojunction Solar Cells—Towards 10 % Energy‐Conversion Efficiency
Markus C. Scharber,David Mühlbacher,Markus Koppe,Patrick Denk,Christoph Waldauf,Alan J. Heeger,Christoph J. Brabec +6 more
TL;DR: In this article, the authors presented a review of several organic photovoltaics (OPV) technologies, including conjugated polymers with high-electron-affinity molecules like C60 (as in the bulk-heterojunction solar cell).
Journal ArticleDOI
Semiconducting tin and lead iodide perovskites with organic cations: phase transitions, high mobilities, and near-infrared photoluminescent properties.
TL;DR: It is found that the chemical and physical properties of these materials strongly depend on the preparation method, and the properties of the title hybrid materials with those of the "all-inorganic" CsSnI3 and CsPbI3 prepared using identical synthetic methods.
Journal ArticleDOI
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Journal ArticleDOI
Cesium-containing triple cation perovskite solar cells: improved stability, reproducibility and high efficiency
Michael Saliba,Taisuke Matsui,Ji-Youn Seo,Konrad Domanski,Juan-Pablo Correa-Baena,Mohammad Khaja Nazeeruddin,Shaik M. Zakeeruddin,Wolfgang Tress,Antonio Abate,Anders Hagfeldt,Michael Grätzel +10 more
TL;DR: In this paper, the triple cation perovskite photovoltaics with inorganic cesium were shown to be thermally more stable, contain less phase impurities and are less sensitive to processing conditions.
Journal ArticleDOI
Bright light-emitting diodes based on organometal halide perovskite
Zhi-Kuang Tan,Reza Saberi Moghaddam,May Ling Lai,Pablo Docampo,Ruben Higler,Felix Deschler,Michael Price,Aditya Sadhanala,Luis M. Pazos,Dan Credgington,Fabian C. Hanusch,Thomas Bein,Henry J. Snaith,Richard H. Friend +13 more
TL;DR: It is shown, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities, Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities.
References
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Journal ArticleDOI
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
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The theory of p-n junctions in semiconductors and p-n junction transistors
TL;DR: The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium, resulting in an admittance for a simple case varying as (1 + iωτ p )1/2 where τ p is the lifetime of a hole in the n-region.
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A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power
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Photon-Radiative Recombination of Electrons and Holes in Germanium
TL;DR: The spectral distribution of photon generation for the photon-radiative recombination of electrons and holes in germanium is determined from known optical properties by application of the principle of detailed balance.