Journal ArticleDOI
Photopumped ZnSe/ZnSSe blue semiconductor lasers and a theoretical calculation of the optical gain
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TLDR
In this paper, the optical gain in ZnSe blue semiconductor lasers was calculated theoretically for various band structures, such as a bulk band structure and a quantum well (QW) structure.About:
This article is published in Journal of Crystal Growth.The article was published on 1992-02-02. It has received 13 citations till now. The article focuses on the topics: Band gap & Direct and indirect band gaps.read more
Citations
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Journal ArticleDOI
Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates
Koji Katayama,H. Yao,Fumitake Nakanishi,Hideyuki Doi,Akihiko Saegusa,N. Okuda,T. Yamada,Hideki Matsubara,M. Irikura,T. Matsuoka,Toshihiko Takebe,S. Nishine,T. Shirakawa +12 more
TL;DR: In this article, the authors showed that ZnSe-based blue/green laser diodes with defect densities lower than 3×104 cm−2 can achieve lifetime at room temperature of up to 2.1 h.
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One-pot facile synthesis of the ZnO/ZnSe heterostructures for efficient photocatalytic degradation of azo dye
Muhammad Fahad Ehsan,Saba Bashir,Saher Hamid,Adeel Zia,Yasir Abbas,Khaula Umbreen,Muhammad Naeem Ashiq,Afzal Shah +7 more
TL;DR: In this paper, the authors reported the synthesis of ZnO/ZnSe heterostructure via one-pot hydrothermal approach for the photocatalytic degradation of diazo dye i.e. Congo red.
Journal ArticleDOI
Blue‐light stimulated emission from a localized state formed by well‐barrier fluctuation in a II‐VI semiconductor superlattice
TL;DR: In this paper, a well-defined exciton absorption peak from a localized state was observed for the first time, which was formed by fluctuation of well-barrier interfaces in a ZnSe/ZnSSe superlattice structure.
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Model for lasing oscillation due to bi-excitons and localized bi-excitons in wide-gap semiconductor quantum wells
TL;DR: In this paper, a model for lasing oscillation due to bi-excitons and localized biexciton in wide-gap II-VI semiconductor quantum wells was presented, and the condition for population inversion was introduced.
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Structure-dependent threshold current density for CdZnSe-based II-VI semiconductor lasers
TL;DR: In this paper, the optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effects taken into account, and optimized structures are obtained for different structures through minimizing the threshold currentdensity.
References
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Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures
TL;DR: In this article, the authors present detailed experimental studies and modeling of the nonlinear absorption and refraction of GaAs/AlGaAs multiple quantum well structures (MQWS) in the small signal regime.
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Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers
Masamichi Yamanishi,Ikuo Suemune +1 more
TL;DR: The polarization dependent gain in quantum well lasers reported previously is explained theoretically in terms of the polarization dependence of momentum matrix elements related to conduction to heavy hole and conduction-to-light hole band transitions.
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Optical characterization and band offsets in ZnSe-ZnSxSe
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Theoretical study of differential gain in strained quantum well structures
TL;DR: In this paper, a theoretical treatment of the band structures where the band nonparabolicity is taken into account is discussed, and the differential gain expected in a strained quantum well (QW) and in a lattice-matched QW is discussed.