Journal ArticleDOI
Photoreflectance of two-dimensional electron gas in the selectively doped GaAs/Al x Ga 1-x as heterostructure grown by molecular beam epitaxy
Tang Yin-Sheng,Jiang Desheng +1 more
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TLDR
In this paper, room temperature photoreflectance was made on a selectively doped GaAs/n-AlxGa1-xAs two-dimensional electron gas grown by molecular beam epitaxy (MBE).Abstract:
Room temperature photoreflectance were made on a selectively doped GaAs/n-AlxGa1-xAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.read more
Citations
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Journal ArticleDOI
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
Fred H. Pollak,H. Shen +1 more
TL;DR: Modulation spectroscopy is a powerful method for the study and characterization of a large number of semiconductor configurations, including bulk/thin film, microstructures (heterojunctions, quantum wells, superlattices, quantum dots), surfaces/interfaces and actual device structures in addition to semiconductor growth/processing as mentioned in this paper.
Journal ArticleDOI
Franz–Keldysh oscillations in modulation spectroscopy
Hongen Shen,Mitra Dutta +1 more
TL;DR: In this paper, the authors present a review of the work on measuring electric fields in semiconductors with a particular emphasis on microstructures using the specialized layer sequence, and discuss the general theory of modulation techniques and their relevance.
Book ChapterDOI
Chapter 4 Photoreflectance Spectroscopy of Microstructures
TL;DR: In this paper, the application and flexibility of modulation spectroscopy, particularly electroreflectance (ER) and photoreflectance (PR), to study artificially structured materials (ASMs) are described.
Journal ArticleDOI
Photoreflectance line shapes of semiconductor microstructures
TL;DR: In this paper, the photoreflectance line shapes of various semiconductor microstructures were discussed and formulas suitable for application in low-dimensional structures were given and used to analyze experimental results.
Journal ArticleDOI
Photoreflectance of selectively doped n-AiGaAs/GaAs heterostructures
TL;DR: In this paper, the two dimensional electron gas concentration dependence of photoreflectance of n-AIGaAs/GaAs heterostructures was explained by analyzing the physical process induced by photo-modulation.
References
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Journal ArticleDOI
Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAs
TL;DR: In this article, it was shown that the photoreflectance is due to the modulation of the electric field in the Schottky surface barrier by photoexcited carriers.
Journal ArticleDOI
Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory
TL;DR: In this article, the photoreflectance (PR) spectra of several GaAs/AlAs superlattices have been measured at 300 and 77 K using monochromatic light sources (laser or mon-ochromator) as a secondary (pump) beam, thus enabling them to study the wavelength dependence of the PR.
Journal ArticleDOI
Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width
TL;DR: Using photoreflectance at room temperature, the authors evaluated the topographical variations in quantum level transitions of a GaAs/GaAlAs multiple quantum well (220 A/150 A) due to changes in barrier height and quantum well width.