Proceedings ArticleDOI
Progress in increasing the maximum achievable output power of broad area diode lasers
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TLDR
In this article, the authors present theoretical and experimental diagnostic studies at the Ferdinand-Braun-Institut have helped trace the saturation effects to three main effects: gain saturation, longitudinal-hole burning, and current driven carrier leakage.Abstract:
High power broad area diode lasers provide the optical energy for all high performance laser systems, either directly or
as pump sources for solid-state lasers. Continuous improvement is required in the peak achievable output power of these
diode laser devices in order to enable performance improvements in full laser systems. In recent years, device technology
has advanced to the point where the main limit to optical power is no longer device failure, but is instead power
saturation due to various physical effects within the semiconductor device itself. For example, the combination of large
optical cavity designs with advanced facet passivation means that facet failure is no longer the dominant limiting factor.
Increases in the optical power therefore require firstly a clear identification of the limiting mechanisms, followed by
design changes and material improvements to address these. Recent theoretical and experimental diagnostic studies at the
Ferdinand-Braun-Institut have helped trace the saturation effects to three main effects: gain saturation, longitudinal-holeburning
and current driven carrier leakage. Design changes based on these studies have enabled increases in the
achievable emitted power density from broad area lasers. Recent experimental examples include ~100W from 100μm
stripes under short-pulsed conditions, > 30W from 100μm stripes under quasi-continuous wave conditions and > 10W
from 30μm stripes under continuous wave conditions. An overview of the results of the diagnostic studies performed at
the FBH will be presented, and the design changes necessary to address the observed power saturation will be discussed.read more
Citations
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Journal ArticleDOI
Efficient High-Power Laser Diodes
Paul Crump,G. Erbert,H. Wenzel,C. Frevert,C. M. Schultz,K.-H. Hasler,R. Staske,Bernd Sumpf,A. Maassdorf,F. Bugge,S. Knigge,G. Trankle +11 more
TL;DR: In this paper, a review of efforts to increase ηE is presented and it is shown that for well-optimized structures, the residual losses are dominated by the p-side waveguide and nonideal internal quantum efficiency.
Journal ArticleDOI
High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
Sergey O. Slipchenko,Aleksandr A. Podoskin,A. V. Rozhkov,Nikita A. Pikhtin,I. S. Tarasov,T. A. Bagaev,M. V. Zverkov,V P Konyaev,Yuriy V. Kurniavko,Maxim A. Ladugin,Aleksandr A Marmalyuk,A. A. Padalitsa,V. A. Simakov +12 more
TL;DR: In this paper, a high-power pulse semiconductor laser based on epitaxially integrated thyristor heterostructures was developed, with the possibility of generating high power laser light pulses with duration on the order of 100 ns at control signal amplitude on the orders of 40-100 mA at extremely low turn-on thyristors voltage of 10 V. The peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.
Journal ArticleDOI
Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs
TL;DR: In this article, a vertical design for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing optical confinement in the quantum well from 0.26% to 1.1%, is presented.
Proceedings ArticleDOI
Cryogenic ultra-high power infrared diode laser bars
TL;DR: In this article, the authors show that operation at -55°C increases conversion efficiency and suppresses thermal rollover, enabling peak quasi-continuous wave bar powers of P out > 1.6 kW.
Journal ArticleDOI
Narrow versus broad asymmetric waveguides for single-mode high-power laser diodes
TL;DR: In this paper, the effect of the optical confinement layer thickness on the far field properties (far field shape and input efficiency) and confinement factor of an asymmetric-waveguide high power laser diode was investigated.
References
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Journal ArticleDOI
Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers
TL;DR: In this article, a two-stage process consisting of removal of thermodynamically unstable species and facet sealing with a passivation layer is proposed for the passivation of mirror facets of Al-free active region high-power semiconductor diode lasers.
Journal ArticleDOI
Theoretical and experimental investigations of the limits to the maximum output power of laser diodes
TL;DR: In this article, the authors investigated the factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents and showed that the decrease in the gain due to self-heating under CW operation and spectral hole burning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial hole burning, are the dominant mechanisms limiting the maximum achievable output power.
Journal ArticleDOI
Asymmetric-Waveguide Laser Diode for High-Power Optical Pulse Generation by Gain Switching
TL;DR: In this article, a semiconductor laser with a strongly asymmetric waveguide structure and a relatively thick active layer is proposed and analyzed for the purpose of generating high-power single-optical pulses by gain switching.
Proceedings ArticleDOI
20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96μm
Paul Crump,Gunnar Blume,Katrin Paschke,R. Staske,A. Pietrzak,Ute Zeimer,Sven Einfeldt,Arnim Ginolas,Frank Bugge,K. Häusler,Peter Ressel,Hans Wenzel,G. Erbert +12 more
TL;DR: In this article, the authors investigated the reliability of a single broad area diode laser diode with stripe widths in the 90-100 μm range and showed that it is possible to operate at 20W per emitter for over 4000 hours without failure, with 60μm stripe devices operating reliably at 10W per stripe.
Book ChapterDOI
High-Power Diode Lasers for Direct Applications
TL;DR: In this paper, all current methods of incoherent as well as of coherent beam combining are described and judged with respect to their present and future potential, and all of them are compared with each other.