S
Sven Einfeldt
Researcher at Ferdinand-Braun-Institut
Publications - 127
Citations - 2964
Sven Einfeldt is an academic researcher from Ferdinand-Braun-Institut. The author has contributed to research in topics: Light-emitting diode & Quantum well. The author has an hindex of 24, co-authored 112 publications receiving 2354 citations. Previous affiliations of Sven Einfeldt include Leibniz Association & Leibniz Institute for Neurobiology.
Papers
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Journal ArticleDOI
Advances in group III-nitride-based deep UV light-emitting diode technology
Michael Kneissl,Michael Kneissl,Tim Kolbe,Christopher L. Chua,V. Kueller,N. Lobo,Joachim Stellmach,Arne Knauer,Hernan Rodriguez,Sven Einfeldt,Z. Yang,N M Johnson,Markus Weyers +12 more
TL;DR: The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications.
Journal ArticleDOI
The 2020 UV emitter roadmap
Hiroshi Amano,Ramon Collazo,Carlo De Santi,Sven Einfeldt,Mitsuru Funato,Johannes Glaab,Sylvia Hagedorn,Akira Hirano,Hideki Hirayama,Ryota Ishii,Yukio Kashima,Yoichi Kawakami,Ronny Kirste,Michael Kneissl,Michael Kneissl,Robert W. Martin,Frank Mehnke,Matteo Meneghini,Abdallah Ougazzaden,Peter J. Parbrook,Siddharth Rajan,Pramod Reddy,Friedhard Römer,Jan Ruschel,Biplab Sarkar,Biplab Sarkar,Ferdinand Scholz,Leo J. Schowalter,Philip A. Shields,Zlatko Sitar,Luca Sulmoni,Tao Wang,Tim Wernicke,Markus Weyers,Bernd Witzigmann,Yuh-Renn Wu,Thomas Wunderer,Yuewei Zhang +37 more
TL;DR: In this article, the state of the art for the most important aspects of UV emitters, their challenges and their outlook for future developments are summarized. But, the development since the first realization of UV electroluminescence in the 1970s shows that an improvement in understanding and technology allows the performance ofUV emitters to be pushed far beyond the current state.
Journal ArticleDOI
Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
Tim Kolbe,Arne Knauer,Chris Chua,Zhihong Yang,Sven Einfeldt,Patrick Vogt,Noble M. Johnson,Markus Weyers,Michael Kneissl +8 more
TL;DR: In this paper, the polarization of the in-plane electroluminescence of (0001) orientated (Al)GaN multiple quantum well light emitting diodes in the ultraviolet-A and ultraviolet-B spectral range was investigated.
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Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes
Frank Mehnke,Christian Kuhn,Martin Guttmann,Christoph Reich,Tim Kolbe,V. Kueller,Arne Knauer,Mickael Lapeyrade,Sven Einfeldt,Jens Rass,Tim Wernicke,Markus Weyers,Michael Kneissl,Michael Kneissl +13 more
TL;DR: In this paper, the design and Mg-doping profile of AlN/Al0.7Ga0.3N electron blocking heterostructures (EBH) for AlGaN multiple quantum well (MQW) light emitting diodes (LEDs) emitting below 250nm was investigated.
Journal ArticleDOI
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
Christoph Reich,Martin Guttmann,Martin Feneberg,Tim Wernicke,Frank Mehnke,Christian Kuhn,Jens Rass,Jens Rass,Mickael Lapeyrade,Sven Einfeldt,Arne Knauer,V. Kueller,Markus Weyers,Rüdiger Goldhahn,Michael Kneissl,Michael Kneissl +15 more
TL;DR: In this article, the optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1−xN multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements.