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Rapid Thermal Processing of Semiconductors
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TLDR
In this article, the authors describe the following processes: Crystallization, Impurity Diffusion and Segregation in Polycrystalline Silicon, component evaporation, defect Annealing, and impurity diffusion in III-V Semicondutors.Abstract:
Transient Heating of Semiconductors by Radiation. Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals. Crystallization, Impurity Diffusion and Segregation in Polycrystalline Silicon. Component Evaporation, Defect Annealing and Impurity Diffusion in the III-V Semicondutors. Diffusion Synthesis of Silicides in Thin Film Metal-Silicon Structures. Rapid Thermal Oxidation and Nitridation. Rapid Thermal Chemical Vapor Deposition. Indexes.read more
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Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.
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Intense pulsed light treatment of cadmium telluride nanoparticle-based thin films.
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Visible luminescence from europium-doped alumina sol–gel-derived films confined in porous anodic alumina
I. S. Molchan,N. V. Gaponenko,Robert Kudrawiec,Jan Misiewicz,Leszek Bryja,G.E. Thompson,Peter Skeldon +6 more
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