Journal ArticleDOI
Recrystallization processes in polycrystalline silicon
C. Daey Ouwens,H. Heijligers +1 more
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TLDR
In this paper, a chemical vapor deposition technique has been used to obtain polycrystalline silicon grains of about 100 μm, which can be used as a substrate for making relatively inexpensive solar cells.Abstract:
Recrystallization processes in polycrystalline silicon made by a chemical vapor deposition technique have been investigated. Primary recrystallization has been observed between 1150 and 1250 °C, secondary recrystallization occurred above 1350 °C. By this procedure, grains of about 100 μm have been obtained. Recrystallized silicon can in principle be used as a substrate for making relatively inexpensive solar cells.read more
Citations
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Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Journal ArticleDOI
Secondary grain growth in thin films of semiconductors: Theoretical aspects
TL;DR: In this article, a model for growth of secondary grains into a uniform matrix of columnar normal grains is presented, which indicates that secondary grain growth rates should increase with grain boundary energy, surface energy anisotropy, grain boundary mobility, and temperature.
Journal ArticleDOI
Surface‐energy‐driven secondary grain growth in ultrathin (<100 nm) films of silicon
Carl V. Thompson,Henry I. Smith +1 more
TL;DR: In this paper, the growth of secondary grains with sizes many times larger than the film thickness and with uniform (111) texture was achieved in ultrathin (<100 nm) films of Si on SiO2.
Journal ArticleDOI
Electrical and optical characteristics of vacuum-sealed polysilicon microlamps
TL;DR: In this paper, a silicon-filament vacuum-sealed incandescent light source has been fabricated using IC technology and subsurface micromachining, and the power required to achieve this temperature (for a filament 510*5*1 mu m) is 5 mW.
Journal ArticleDOI
Epitaxial alignment of polycrystalline Si films on (100) Si
B. Y. Tsaur,L. S. Hung +1 more
TL;DR: In this article, fine-grained polycrystalline Si films obtained by chemical vapor deposition can be aligned expitaxially with respect to the underlying (100) Si substrate upon furnace annealing at temperatures of 1000-1150°C.
References
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Journal ArticleDOI
Chemical Vapor Deposited Polycrystalline Silicon
M. E. Cowher,T. O. Sedgwick +1 more
Journal ArticleDOI
Epitaxial silicon p‐n junctions on polycrystalline ``ribbon'' substrates
TL;DR: In this article, it was shown that the epitaxial layer is structurally much superior to the substrate material, and good quality pn junctions have been epitaxially grown on these ribbons with reasonable values of minority carrier lifetime and saturation current density, but variations are observed related to structural imperfections.