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Journal ArticleDOI

Reduction of frequency-modulation noise from Gunn oscillators

W.P.N. Court
- 01 Dec 1967 - 
- Vol. 3, Iss: 12, pp 567-569
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TLDR
By using a simple cavity which gives a high rate of change of reactance with frequency, it was shown that the f.m. noise from a Gunn oscillator can be reduced to a much lower level than that reported recently by Faulkner and Meade as discussed by the authors.
Abstract
By using a simple cavity which gives a high rate of change of reactance with frequency, it is shown that the f.m. noise from a Gunn oscillator can be reduced to a much lower level than that reported recently by Faulkner and Meade.

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Citations
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Journal ArticleDOI

Frequency-Saturation Effects in Transferred Electron Oscillators

TL;DR: In this article, it was shown that the frequency of transverse resonance can be increased by moving the encapsulation to a central position in the waveguide cross-section, which can improve the performance of waveguide-mounted oscillators.
Journal ArticleDOI

Circuit considerations in the design of wide-band tunable transferred-electron oscillators

TL;DR: In this article, a theoretical and experimental investigation into a particular type of tunable microwave circuit commonly used for LSA operation of GaAs layers is reported, where the theoretical result is used to deduce design criteria for a J-band (11 to 19 GHz) waveguide circuit in order to optimize the performance of the oscillator with respect to tunning range, efficiency, and FM noise performance.
Journal ArticleDOI

Microwave Gunn oscillator tuned electronically over 1 GHz

B.K. Lee, +1 more
- 14 Jun 1968 - 
TL;DR: In this article, a J band Gunn oscillator, tuned by a varactor, has been constructed, which can be mechanically tuned over 3 GHz and an electronic tuning range of 1 GHz with an average power output of 15 mW and less than 1 dB variation.
Journal ArticleDOI

Semiconductor microwave generators

C Hilsum
- 01 Mar 1968 - 
TL;DR: In this paper, an account is given of the four types of microwave generators made from semiconductors: the transistor, the varactor, the avalanche diode and the transferred electron diode.
Journal ArticleDOI

Influence of the Harmonics on the Power Generated by Waveguide-Tunable Gunn Oscillators (Short Papers)

TL;DR: In this paper, it has been observed that in many cases the power generated by waveguide-tunable Gunn oscillators varies irregularly and rapidly with the tuning, which is attributed to the interaction between the fundamental and harmonic signals due to the diode nonlinearity.
References
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Journal ArticleDOI

Principles and applications of waveguide transmission

TL;DR: In this paper, the preface and the historical introduction of the Hell System Technical Journal are published in its entirety. But they do not cover the introduction and chapter 6 in their full version.
Journal ArticleDOI

Noise performance of Gunn microwave generators in X and J band

TL;DR: In this article, the results of f.m. and a.m noise power measurements made on the Gunn oscillator in X and J band were reported, in a 70 c/s bandwidth at frequencies lying between 1 kc/s and 100 kc /s away from the center frequency.
Journal ArticleDOI

Frequency-modulation noise in Gunn oscillators

TL;DR: In this article, the frequency modulation noise in X band Gunn oscillators has been measured and the overall spectral width is determined by low-rate (<1Hz) fluctuations with an r.m.s. value in the region of 3 kHz.
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