Relation of neutron to ion damage annealing in Si and Ge

TLDR: In this paper, structural measurements of Si and Ge were compared and interpreted in terms of the annealing of identified defects, and it was shown that the center temperatures for both Ge and Si were approximately 0.35 and 0.5 times the melting temperature.

Abstract: Structural measurements of neutron and ion damage annealing in Si and Ge are compared and interpreted in terms of the annealing of identified defects. Either or both of two prominent isochronal annealing stages above room temperature in neutron irradiated Si are exhibited by X-ray, electron microscope, infrared, and electrical measurements. It is shown that the same two annealing stages are observed in Rutherford scattering measurements of ion implanted Si. Two similar prominent annealing stages are also observed for structural measurements of neutron and ion irradiated Ge. For both Ge and Si the center temperatures for the two annealing stages are approximately 0.35 and 0.5 times the melting temperature. The annealing kinetics and activation energies for the lower temperature stage in Si are correlated with the kinetics and activation energies obtained by analyzing previously reported results on the effects of the substrate temperature and the ion irradiation rate. From a comparison of the time ...