Patent
Replacement metal gate and fabrication process with reduced lithography steps
TLDR
In this article, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps, in turn reducing the overall cost and complexity of fabrication.Abstract:
Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield.read more
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Method of forming a structure on a substrate
TL;DR: In this article, the authors proposed a method of providing a structure by depositing a layer on a substrate in a reactor, which consisted of: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reaction chamber; and, providing an energy source to create a plasma from the reactive gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.
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TL;DR: In this article, a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reaction and introducing a second reaction to fill the gaps with a second dose.
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TL;DR: In this article, the first correction factor of a first contact type temperature sensor within a first reaction chamber utilizing a first temperature sensor and applying the first calibration factor to the first non-contact type temperature sensors to provide a first calibrated noncontact temperature sensor.
References
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Patent
Self-aligned contacts
T Bohr Mark,Tahir Ghani,Nadia M. Rahhal-Orabi,Joshi Subhash,Joseph M. Steigerwald,Jason Klaus,Jack Hwang,Mackiewicz Ryan +7 more
TL;DR: In this article, the insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations, and a pair of diffusion regions adjacent to the pair of spacers.
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TL;DR: In this paper, the methods of filling features with tungsten and related systems and apparatus are described, including inside-out fill techniques as well as conformal deposition in features.
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Fujiyama Yuichiro,Itou Fumitaka +1 more
TL;DR: In this article, a silicon nitride film (a first insulating film) is formed so as to cover a plurality of gate electrodes 3b, and then an ozone tetraethylorthosilicate (TEOS) film and a plasma TEOS film are laminated in order.
Patent
Methods of Forming Replacement Gate Structures for Semiconductor Devices
TL;DR: In this paper, the authors present methods of constructing replacement gate structures by forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gated structure to define a gate cavity, forming a layer of metal within the gate cavity above the layer of insulating material, and then performing an etching process to remove the exposed portion of the metal from within the gated cavity.
Patent
Method of manufacturing semiconductor device
TL;DR: In this article, a method of manufacturing a semiconductor element capable of improving the driving ability of the semiconductor elements and suppressing deterioration in element characteristics is provided, which includes a step S 1 of forming a layer on a surface of a substrate, the layer having a melting point higher than the substrate; step S 2 of heating the layer by irradiating the layer with laser and melting a part of the surface of the substrate, thereby making the part of surface of substrate in a wave pattern; and step S 3 of removing the layer and exposing the part from the substrate.