Proceedings ArticleDOI
Resonant tunneling diode based on band gap engineered graphene antidot structures
Penchalaiah Palla,Anita Sagadevan Ethiraj,J. P. Raina +2 more
- Vol. 1724, Iss: 1, pp 020069
TLDR
In this paper, double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD) with band gap engineered graphene antidot tunnel barriers is presented.Abstract:
The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green’s Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved self-consistently for device study. The interesting feature in this device is that it is an all graphene RTD with band gap engineered graphene antidot tunnel barriers. Another interesting new finding is that it shows negative differential resistance (NDR), which involves the resonant tunneling in the graphene quantum well through both the electron and hole bound states. The Graphene Antidot Lattice (GAL) barriers in this device efficiently improved the Peak to Valley Ratio to approximately 20 even at room temperature. A new fitting model is developed for the number of antidots and their corresponding effective barrier width, which will help in determining effective barrier width of any size of actual antidot geometry.read more
Citations
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Journal ArticleDOI
Effects of uniaxial strain on the performance of armchair graphene nanoribbon resonant tunneling diode
Milad Zoghi,M. Z. Kabir +1 more
Journal ArticleDOI
Electrically Doped Nanoscale Devices Using First-Principle Approach: A Comprehensive Survey
Debarati Dey,Debarati Dey,Debashis De,Debashis De,Ali Ahmadian,Ali Ahmadian,Ferial Ghaemi,Norazak Senu +7 more
TL;DR: In this paper, the authors review the historical roadmap of electrical doping at the molecular level and compare the performance of electrical and conventional doping methods, and conclude with a brief comparative study between conventional and electrical methods.
Dissertation
Role of defects comprise of antidot, Boron/Nitride doping, and uniaxial strain on the electronic/transport properties of GNR, and CNT based RTD devices
TL;DR: In this paper, three kinds of defects comprise of antidots, Boron Nitride (BN) doping, and uniaxial strain are used to modify intrinsic properties of Graphene nanoribbons and Carbon nanotubes (CNTs).
References
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Journal ArticleDOI
Semiempirical model for nanoscale device simulations
TL;DR: In this paper, a semi-empirical model for calculating electron transport in atomic-scale devices is presented, which is an extension of the extended H\"uckel method with a selfconsistent Hartree potential that models the effect of an external bias and corresponding charge rearrangements in the device.
Journal ArticleDOI
Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study
TL;DR: In this paper, the authors investigated the effect of the shape of the patterned GNR and the operating temperature on the performance of the device and the temperature dependency of the peak-valley ratio (PVR), respectively.
Journal ArticleDOI
Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography
Alireza Kazemi,Xiang He,Seyedhamidreza Alaie,Javad Ghasemi,Noel Dawson,Francesca Cavallo,Terefe G. Habteyes,Steven R. J. Brueck,Sanjay Krishna +8 more
TL;DR: This work reports on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes) and demonstrates the feasibility of cost-effective development of large-scale semiconductor graphene sheets and devices.
Journal ArticleDOI
Resonant tunneling structures based on epitaxial graphene on SiC
TL;DR: In this article, the authors proposed to use spatial doping to generate graphene-on-SiC double-barrier structures, where the non-equilibrium Green's function technique for solving the massive Dirac model is applied to highlight typical transport phenomena such as the electron confinement and the resonant tunneling effects.