Distributed feedback GaAs-GaAlAs diode lasers with a separate confinement heterostructure are fabricated and operated successfully at room temperature under pulse and DC bias. A threshold current density of 3.4 kA/cm2 is obtained at junction temperature Tj=320 K. The lasing spectra are examined closely, and single longitudinal mode oscillation is ascertained up to twice the threshold current density.

This paper deals with the theory and device applications of periodic thin-film waveguides. Topics treated include mode solutions, optical filters, distributed feedback lasers (DFB), distributed Bragg reflector (DBR) lasers, grating couplers, and phase matching in nonlinear interactions.

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Room Temperature Operation of Distributed Feedback Diode Lasers with Separate Carrier and Optical Confinement

Periodic structures for integrated optics

The lasing characteristics of separate-confinement-heterostructure (SCH-structure) distributed-feedback (DFB) diode lasers are examined theoretically and experimentally. Wave propagation in five-layer SCH waveguides is analyzed to estimate such parameters as the lasing wavelength, coupling constant, and external quantum efficiency. Spectral and modal behavior are studied in the experiment and compared with the theoretical predictions. Diodes are shown to lase in a single longitudinal mode with a definite polarization. Spectral width is about 300 MHz just above the threshold, and becomes wider with increased excitation level. An output power of 40 mW with an external quantum efficiency of 5 percent is obtained under CW operation.

Room Temperature Operation of Distributed Feedback Diode Lasers with Separate Carrier and Optical Confinement

Citations

Periodic structures for integrated optics

Lasing characteristics of distributed-feedback GaAs-GaAlAs diode lasers with separate optical and carrier confinement

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