Journal ArticleDOI
Semiconducting and magnetic properties of rhombohedral Cr2S3
TLDR
In this article, the magnetic properties and the electrical resistivity, the Hall effect, the thermoelectric power, and the magnetoresistance were carried out on polycrystalline rhombohedral Cr2S3.About:
This article is published in Journal of Solid State Chemistry.The article was published on 1970-08-01. It has received 25 citations till now. The article focuses on the topics: Curie temperature & Curie–Weiss law.read more
Citations
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Magnetic semiconductors
TL;DR: In this paper, the available experimental information on cross effects between electric and magnetic properties is reviewed, and the observed phenomena are discussed on the basis of a simple model with an exchange interaction between the charge carriers and the magnetic moments.
Journal ArticleDOI
Ultrathin Non-van der Waals Magnetic Rhombohedral Cr2S3: Space-Confined Chemical Vapor Deposition Synthesis and Raman Scattering Investigation
Journal ArticleDOI
Magnetic susceptibility and nuclear magnetic-resonance of vanadium sulfides
A.B. De Vries,C. Haas +1 more
TL;DR: In this article, the magnetic susceptibility of vanadium sulfides was measured in the temperature range 4-1000°K for the vanadium compounds VS, V 3 S 4 -V 2 S 3 and V 5 S 8, and two lines were attributed to vanadium atoms with itinerant d electrons.
Journal ArticleDOI
Spin structure and magnetic anisotropy of Cr5S6 and rhombohedral Cr2S3
T.J.A. Popma,C. Haas,B. van Laar +2 more
TL;DR: In this paper, the magnetic properties of single crystals of rhombohedral Cr2S3 have been measured and the magnetic anisotropy energy of these crystals has been estimated.
References
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Journal Article
Magnetic semiconductors
TL;DR: In this paper, the available experimental information on cross effects between electric and magnetic properties is reviewed, and the observed phenomena are discussed on the basis of a simple model with an exchange interaction between the charge carriers and the magnetic moments.
Journal ArticleDOI
Spin-Disorder Scattering and Magnetoresistance of Magnetic Semiconductors
TL;DR: In this paper, the consequences of a simple type of exchange interaction between free charge carriers in a broad energy band and localized magnetic moments are discussed, which causes a splitting of the energy bands into bands for the two spin directions.
Journal ArticleDOI
The magnetoresistance of n-type CdCr2Se4
TL;DR: In this paper, the magnetoresistance of n-type CdCr2Se4 has been measured as a function of temperature (100 − 180°K) and magnetic field (0 − 12 kOe) near the ferromagnetic Curie temperature Tc ≈ 130° K.
Related Papers (5)
Spin structure and magnetic anisotropy of Cr5S6 and rhombohedral Cr2S3
T.J.A. Popma,C. Haas,B. van Laar +2 more