Patent
Semiconductor device and method of manufacturing the same
Reads0
Chats0
TLDR
A semiconductor device includes a gate, a first electrode, an active layer, an etching stop layer, a second insulating layer and a source, a drain and a second electrode as mentioned in this paper.Abstract:
A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.read more
Citations
More filters
Patent
Three-dimensional semiconductor memory device
TL;DR: In this article, a semiconductor memory device is provided including first and second cell strings formed on a substrate, the first cell strings jointly connected to a bit line, and the second string selection unit of the second cell string has a channel dopant region.
Patent
Semiconductor memory device and method for manufacturing same
Takuji Kuniya,Yosuke Komori,Ryota Katsumata,Yoshiaki Fukuzumi,Masaru Kito,Masaru Kidoh,Hiroyasu Tanaka,Megumi Ishiduki,Hideaki Aochi +8 more
TL;DR: In this paper, a laminated body is formed by alternately laminating a plurality of dielectric films and electrode films on a silicon substrate, and a through hole extending in the lamination direction is formed.
Patent
Semiconductor devices and methods of manufacturing the same
TL;DR: In this article, a gate pattern and a source/drain region are formed at both sides of the gate pattern, and the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source and drain region, and forming a second insulation layer covering the entire surface of the substrate.
Patent
Method of making a vertical nand device using sequential etching of multilayer stacks
TL;DR: In this article, a method of making a vertical NAND device includes forming a lower portion of a memory stack over a substrate, forming an upper portion of memory openings in the lower portion, and at least partially filling the lower part of the memory openings with a sacrificial material.
Patent
Organic light emitting diode display
TL;DR: An organic light emitting diode (OLED) display includes a flexible substrate, a barrier layer disposed on the flexible substrate and an organic light-emitting diode disposed in the barrier layer as discussed by the authors.
References
More filters
Patent
Thin film transistor and organic light-emitting display device having the thin film transistor
TL;DR: In this paper, a thin-film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate is described.
Patent
Organic light-emitting display device and method of manufacturing the same
TL;DR: In this paper, an organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode, the TFT includes at least one of a switching TFT and a driving TFT.
Patent
Liquid crystal display device and method for manufacturing the same
Shunpei Yamazaki,Kaoru Hatano +1 more
TL;DR: In this paper, the authors proposed a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contacthole for the processing of a semiconductor layer are formed simultaneously.
Patent
Semiconductor device and manufacturing method thereof
TL;DR: In this paper, a method for manufacturing a semiconductor device having an n-channel transistor and a p-channel transistor, each of which has an insulation film of a high electric permittivity, inhibits a foreign matter from adhering to the side of a gate insulation film, is presented.
Patent
Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof
TL;DR: In this paper, a half-tone mask was employed to reduce the number of masks used in the making of the TFT array arrangement by employing halftone masks that are followed by a two-step etching process and by forming layers of the capacitor simultaneous with the formation of layers.