Patent
Semiconductor device having a monotonically decreasing impurity concentration
TLDR
In this article, an n-layer is formed in place of the 2-layer in a semiconductor device having a pn junction, and the concentration distribution of impurity in the n layer monotonically decreases from the side of the surface (S1) and reaches its minimum on the side-interface (BS).Abstract:
An n- layer (2E) having a low impurity concentration is epitaxially grown on a surface (S1) of an n+ silicon substrate (1) having a high impurity concentration to a depth (D), and phosphorus ions (P) are implanted from the surface (S1) to the inside of the n- layer (2E). A SiO2 film is formed on the surface S1 by thermal oxidation, and an opening hole is formed in the SiO2 film. Using the opening hole, p-type impurities are implanted and diffused by thermal oxidation in the ion-implanted n- layer (2E), forming a p-type diffusion layer (well) from the surface (S1) to a predetermined depth. In this way, an n layer is formed in place of the n- layer (2E). The concentration distribution of impurity in the n layer monotonically decreases from the side of the surface (S1) and reaches its minimum on the side of an interface (BS). Then, a predetermined electrode is formed, completing the device. Thus, variations in both on-state resistance and breakdown voltage are reduced in a semiconductor device having a pn junction.read more
Citations
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Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof
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References
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Patent
Method for making defect-free zone by laser-annealing of doped silicon
TL;DR: In this article, the authors proposed a method for improving the electrical properties of silicon semiconductor material by irradiating a selected surface layer with high power laser pulses characterized by a special combination of wavelength, energy level, and duration.
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