D
Dean E. Probst
Researcher at Fairchild Semiconductor International, Inc.
Publications - 37
Citations - 1464
Dean E. Probst is an academic researcher from Fairchild Semiconductor International, Inc.. The author has contributed to research in topics: Trench & Field-effect transistor. The author has an hindex of 15, co-authored 37 publications receiving 1459 citations.
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Patent
Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
Patent
Trench-gate field effect transistors and methods of forming the same
Hamza Yilmaz,Daniel Calafut,Christopher Boguslaw Kocon,Steven Sapp,Dean E. Probst,Nathan Kraft,Thomas E. Grebs,Rodney S. Ridley,Gary M. Dolny,Bruce D. Marchant,Joseph A. Yedinak +10 more
TL;DR: In this paper, a gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode, and a gate dielectric layer is formed such that it flares out and extends directly under the body region.
Patent
Methods of making power semiconductor devices with thick bottom oxide layer
Ashok Challa,Alan Elbanhawy,Dean E. Probst,Steven Sapp,Peter H. Wilson,Babak S. Sani,Becky Losee,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher Boguslaw Kocon,Debra S. Woolsey +12 more
TL;DR: In this paper, a conformal oxide film is used to fill the bottom of a trench formed in a semiconductor substrate and cover a top surface of the substrate, and then the oxide film can be etched off the top surface and inside the trench to leave a substantially flat layer of oxide having a target thickness at bottom of the trench.
Patent
Self-aligned trench mosfets and methods for making the same
TL;DR: In this article, a self-aligned structure for the MOSFET is provided by making the sidewall of the overlying isolation dielectric layer substantially aligned with the gate conductor.
Patent
Method of manufacturing trench field effect transistors with trenched heavy body
TL;DR: In this paper, a process for manufacturing trench field effect transistors improves transistor ruggedness without compromising transistor cell pitch by etching a trench into the body region and filling the heavy body trench with high conductivity material such as metal that makes contact to both the body and the source region.