B
Becky Losee
Researcher at Fairchild Semiconductor International, Inc.
Publications - 16
Citations - 1146
Becky Losee is an academic researcher from Fairchild Semiconductor International, Inc.. The author has contributed to research in topics: Trench & Layer (electronics). The author has an hindex of 11, co-authored 16 publications receiving 1146 citations.
Papers
More filters
Patent
Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
Patent
Methods of making power semiconductor devices with thick bottom oxide layer
Ashok Challa,Alan Elbanhawy,Dean E. Probst,Steven Sapp,Peter H. Wilson,Babak S. Sani,Becky Losee,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher Boguslaw Kocon,Debra S. Woolsey +12 more
TL;DR: In this paper, a conformal oxide film is used to fill the bottom of a trench formed in a semiconductor substrate and cover a top surface of the substrate, and then the oxide film can be etched off the top surface and inside the trench to leave a substantially flat layer of oxide having a target thickness at bottom of the trench.
Patent
Trenched-gate field effect transistors and methods of forming the same
Christopher Boguslaw Kocon,Steven Sapp,Paul Thorup,Dean E. Probst,Robert Herrick,Becky Losee,Hamza Yilmaz,Christopher L. Rexer,Daniel Calafut +8 more
TL;DR: In this paper, a monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region, where a conductor layer fills the contact opening to electrically contact.
Patent
Self-aligned trench mosfets and methods for making the same
TL;DR: In this article, a self-aligned structure for the MOSFET is provided by making the sidewall of the overlying isolation dielectric layer substantially aligned with the gate conductor.
Patent
Structure and method for forming a trench mosfet having self-aligned features
TL;DR: In this article, a semiconductor device is formed as follows: a portion of the silicon layer is removed to form a middle section of a trench extending into the silicon layers from the exposed surface area of the Silicon layer.