Journal ArticleDOI
Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation
S. Roosild,R. Dolan,B. Buchanan +2 more
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This article is published in Journal of The Electrochemical Society.The article was published on 1968-03-01. It has received 26 citations till now. The article focuses on the topics: Ion implantation & Doping.read more
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Journal ArticleDOI
X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation
U. Bonse,M. Hart,G. H. Schwuttke +2 more
TL;DR: In this article, the X-ray interference fringes observed in topographs of silicon crystals bombarded with high energy ions (dose > 1015 ions/cm2) were used to analyze the deformation state of the crystal.
Journal ArticleDOI
The adjustment of mos transistor threshold voltage by ion implantation
TL;DR: In this paper, two new techniques have been demonstrated to set the threshold voltage of p-channel MOS transistors and integrated circuits using ion implantation to alter the doping profile near the Si-SiO2 interface.
Journal ArticleDOI
Properties of silicon implanted with boron ions through thermal silicon dioxide.
TL;DR: In this paper, the properties of silicon implanted with boron ions through thermal SiO2 films were studied using sheet resistivity measurements (corroborated by Hall data).
Journal ArticleDOI
Post annealing conductance behavior of implanted layers in silicon
TL;DR: In this article, it was shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation, from the standpoint of conductance, low-temperature implanting is to be favored.
Journal ArticleDOI
Threshold shift calculations for ion implanted MOS devices
TL;DR: In this paper, the solutions of Poisson's equation applicable to ion implanted MOS devices have been used to generate capacitance-voltage relationships for capacitors and threshold voltage shifts for transistors.
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S. Roosild,R. Dolan,B. Buchanan +2 more