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Journal ArticleDOI

The adjustment of mos transistor threshold voltage by ion implantation

M. R. Mac Pherson
- 01 Jun 1971 - 
- Vol. 18, Iss: 11, pp 502-504
TLDR
In this paper, two new techniques have been demonstrated to set the threshold voltage of p-channel MOS transistors and integrated circuits using ion implantation to alter the doping profile near the Si-SiO2 interface.
Abstract: 
Two new techniques have been demonstrated to set the threshold voltage of p‐channel MOS transistors and integrated circuits. Both processes employ ion implantation to alter the doping profile near the Si–SiO2 interface. The first centers the ion distribution at the interface while the second places it well inside the silicon. Thresholds may be modified from enhancement through depletion mode. Either method is compatible with standard MOS processes.

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Citations
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Journal ArticleDOI

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

M. Spijkman, +7 more
- 02 Aug 2011 - 
TL;DR: The first dual-gate thin-film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor and a-Si:H and organic semiconductors have led to additional ways of making DGTFTs.
Journal ArticleDOI

Introduction rates and annealing of defects in ion‐implanted SiO2 layers on Si

E. P. EerNisse, +1 more
- 01 Dec 1974 - 
TL;DR: In this paper, the introduction rates and isochronal annealing behavior of structural defects created by atomic collision or ionization in SiO2 layers thermally grown on Si in O2 and steam are investigated by measuring the induced volume compaction for ion and electron bombardments.
Journal ArticleDOI

Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator

Kenneth G. Aubuchon
- 01 Jan 1971 - 
TL;DR: In this paper, it has been found for p-channel MOS devices that considerably better radiation tolerance than generally believed possible can be obtained with gate insulators of thermally grown SiO2, provided that the processing conditions are optimized for radiation resistance.
Journal ArticleDOI

MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage

W. Fichtner, +1 more
- 01 Jan 1979 - 
TL;DR: In this article, an analytical model of the subthreshold current and threshold voltage of MOS transistors is presented by comparison with experimental results and two-dimensional numerical calculations. But the model is not suitable for the case of ion-implanted short-channel devices.
Journal ArticleDOI

Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors

Fatemeh Gholamrezaie, +7 more
- 23 Jan 2012 - 
TL;DR: The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
References
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Journal ArticleDOI

Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon

Bruce E. Deal, +3 more
- 01 Mar 1967 - 
TL;DR: In this paper, the surface state charge associated with thermally oxidized silicon has been studied experimentally using MOS structures and the results indicate that the surface-state charge can be reproducibly controlled over a range 1010-1012 cm -2, and it is an intrinsic property of the silicon dioxide-silicon system.
Journal ArticleDOI

Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures

A.S. Grove, +3 more
- 01 Feb 1965 - 
TL;DR: The results of a comprehensive study of the overall electrical characteristics of thermally oxidised silicon surfaces are presented, and interpreted on the basis of a simple physical model of the MOS structure as mentioned in this paper.
Journal ArticleDOI

Semiconductor Doping by High Energy 1–2.5 Mev Ion Implantation

S. Roosild, +2 more
- 01 Mar 1968 - 
Journal ArticleDOI

The influence of non-uniformly doped substrates on mos C-V curves

S.D. Brotherton, +1 more
- 01 Dec 1970 - 
TL;DR: Theoretical C -V curves have been computed for substrate impurity concentrations which drop exponentially to a constant background level on receding from the surface as mentioned in this paper, and it is shown that for certain impurity profiles the C-V curves appear similar to those which would be obtained from a uniformly doped substrate with a large surface state density.
Journal ArticleDOI

The components of M.O.S. oxide charge and their dependence upon the oxidation process

S. J. Laverty, +1 more
- 01 Apr 1969 - 
TL;DR: In this paper, the surface state charge Qss associated with the silicon/silicon dioxide interface is shown to consist of three distinct component charges: mobile charge, fixed charge and interface state charge.