Patent
Shielded magnetic tunnel junction magnetoresistive read head
TLDR
In this article, the thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium.Abstract:
A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device located between two spaced-apart magnetic shields. The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions, also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium. To reduce the likelihood of electrical shorting between the shields if the shield-to-shield spacing is too small, each of the shields can have a pedestal region with the MTJ device located between the two pedestals, so that the shield-to-shield spacing outside the pedestal regions is greater than in the pedestal regions.read more
Citations
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Journal ArticleDOI
Magnetically engineered spintronic sensors and memory
Stuart S. P. Parkin,Xin Jiang,Christian Kaiser,Alex Panchula,Kevin P. Roche,Mahesh G. Samant +5 more
TL;DR: The magnetic tunnel junction (MTJ) as discussed by the authors is an example of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems.
Patent
Storage element and memory
Yutaka Higo,Masanori Hosomi,Kazuhiro Bessho,Tetsuya Yamamoto,Hiroyuki Ohmori,Kazutaka Yamane,Yuki Oishi,Hiroshi Kano +7 more
TL;DR: In this article, a storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with tunnel insulation layer, and with the direction of magnetization of storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction.
Patent
Magnetoresistive sensor having hard biased current perpendicular to the plane sensor
TL;DR: In this paper, the authors present an apparatus for fabricating a magnetic field sensor having a magnetoresistive element, a magnetic bias layer for bias bias, and an electrical insulator positioned between the bias layer and the magnetoregressive element.
Patent
Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
TL;DR: In this paper, an improved bias magnet-to-magnetoresistive element interface and method of fabrication is presented, where the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper.
Patent
Data storage and retrieval apparatus with thin film read head having planarized extra gap and shield layers and method of fabrication thereof
TL;DR: In this article, the authors proposed a read sensor consisting of a shield, a sensor element, an extra gap between the shield and the sensor, and a gap layer between the sensor element and the extra shield.
References
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Patent
Magnetic device and magnetic sensor using the same
TL;DR: In this article, the relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device.
Patent
Tunneling ferrimagnetic magnetoresistive sensor
Gregory S. Lee,Erjl Mao +1 more
TL;DR: In this article, the authors proposed a tunneling ferrimagnetic magnetoresistive sensor that can undergo a substantial change in resistance in response to a magnetic field in the intensity range of 10s of Oe, which is typical of the intensity of the magnetic fields encountered in magnetic recording media such as discs and tapes.
Patent
Magnetic head with biased GMR element and sense current compensation
TL;DR: In this paper, the orientation direction of the magnetic bias field is canted to reduce or cancel the effect on the sensing element of a magnetic field produced by applied sense current (MSC).
Patent
Magnetoresistive cpp mode transducer with multiple spin valve members
TL;DR: A magnetoresistive sensing device employs a plurality of spin valve giant magnetoreceptors with sense current flowing through the sensors in a direction perpendicular to the plane of the sensors as discussed by the authors.