Patent
Shielded magnetic tunnel junction magnetoresistive read head
TLDR
In this article, the thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium.Abstract:
A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device located between two spaced-apart magnetic shields. The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions, also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium. To reduce the likelihood of electrical shorting between the shields if the shield-to-shield spacing is too small, each of the shields can have a pedestal region with the MTJ device located between the two pedestals, so that the shield-to-shield spacing outside the pedestal regions is greater than in the pedestal regions.read more
Citations
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Patent
Cpp-type thin-film magnetic head and manufacturing method thereof
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TL;DR: In this paper, the authors propose a spacer having at least a nonmagnetic metal layer inserted between the upper shield layer and the longitudinal bias layers, which ensures that the amount of magnetic flux entering the magnetoresistive film from the bias layers is larger than that absorbed by the upper-shield layer.
References
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Patent
Magnetic tunnel junctions with controlled magnetic response
TL;DR: In this paper, a magnetic tunnel junction (MTJ) device is used as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array.
Patent
Magnetic tunnel junction device with longitudinal biasing
TL;DR: A magnetic tunnel junction device for use as a magnetic memory cell or a magnetic field sensor has one fixed ferromagnetic layer and one sensing magnetometer on opposite sides of the insulating tunnel barrier layer.
Patent
Multilayer magnetoresistance effect-type magnetic head
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TL;DR: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, so that a current flows in the intermediate layer as discussed by the authors.
Patent
Magnetoresistive element and devices utilizing the same
TL;DR: In this article, the MR element of such arrangement offers a surprisingly large MR ratio under application of a sufficiently low magnetic field despite such a simple arrangement thereof, despite the fact that a simple three-layer structure has a relatively small MR ratio.
Patent
Electron tunneling device using ferromagnetic thin films
TL;DR: Ferromagnetic/insulator/ferromagnetic tunneling has been shown to give over 10% change in the junction resistance with H less than 100 Oe, at room temperature but decreases at high dc-bias across the junction.