Patent
Silicon carbide field effect device
TLDR
In this paper, a silicon carbide field effect device with a drift region and a channel region is presented, where the drift region extends adjacent the drain region and the channel region extends between the source and drain regions.Abstract:
A silicon carbide field effect device includes vertically stacked silicon carbide regions of first conductivity type, extending from a lowermost drain region to an uppermost source region. In between the drain and source regions, a drift region and a channel region are provided. The drift region extends adjacent the drain region and the channel region extends between the drift region and the source region. Control of majority carrier conduction between the source and drain regions is provided by a plurality of trenches, which extend through the source and channel region, and conductive gate electrodes therein. To provide high blocking voltage capability and low on-state resistance, the doping concentration in the drift region is selected to be greater than the doping concentration of the channel region but below the doping concentration of the drain and source regions. Preferably, the material used for the gate electrodes, the spacing between adjacent trenches and the doping concentration of the channel region are chosen so that the channel region is depleted of majority charge carriers when zero potential bias is applied to the gate electrodes.read more
Citations
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Naohiro Suzuki,Hideo Matsuki,Masahiro Sugimoto,Hidefumi Takaya,Jun Morimoto,Tsuyoshi Ishikawa,Narumasa Soejima,Yukihiko Watanabe +7 more
TL;DR: In this paper, the authors propose a silicon carbide semiconductor device consisting of a substrate, a drift layer, a base region, source region, a trench, a gate insulating layer, gate electrode, a source electrode, drain electrode and a deep layer.
Patent
Silicon carbide semiconductor device
TL;DR: In this paper, a silicon-carbide semiconductor device (101) has a main electrode (52), a first barrier layer (70a), and a wiring layer (60), which is made from a conductive material that does not contain aluminum.
References
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Patent
Silicon carbide power mosfet with floating field ring and floating field plate
TL;DR: In this paper, the first and second silicon carbide layers are used to form a floating field ring in the termination region of a power MOSFET. But the floating field rings are not used in this paper.
Patent
Power rectifier with trenches
TL;DR: A semiconductor power rectifier attains low forward voltage drop, low reverse leakage current and improved switching speed by utilizing Schottky contact regions in a p-i-n rectifier along with other means for reducing the required forward bias voltage as mentioned in this paper.
Patent
Low noise, high frequency synchronous rectifier
Khai D. T. Ngo,Robert Louis Steigerwald,John P. Walden,Bantval Jayant Baliga,Charles Steven Korman,Hsueh-Rong Chang +5 more
TL;DR: In this article, a synchronous rectifier with Schottky diodes is proposed. But the Schotty diode is not a junction diode in the structure, unlike the conventional FETs.
Patent
MOS-gated thyristor
TL;DR: In this paper, an MOS structure is provided by a fifth region (11) forming a pn junction with the cathode region (9), a sixth region (13) in contact with the C electrode (C), and an insulated gate (15) overlying a conduction channel area (110) of the fifth region(11) for defining a gateable conductive path for charge carriers into the cathodes region(9) to initiate thyristor action.