Patent
Power semiconductor devices having improved high frequency switching and breakdown characteristics
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TLDR
The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.Abstract:
Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower-trench based source electrodes. The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.read more
Citations
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Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
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TL;DR: A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type as discussed by the authors, and each of the plurality of pillars of second conductivities type further includes an implant portion filled with semiconductor material.
References
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Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
TL;DR: In this paper, a power transistor with high breakdown voltage and low on-state resistance includes a vertical field effect transistor in a semiconductor substrate having a plurality of source, channel, drift and drain regions therein.
Patent
Semiconductor devices exhibiting minimum on-resistance
TL;DR: In this article, an improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region to reorient the electric field associated with those charges toward the gate electrode and transverse to the direction of current flow through the device.
Patent
Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
TL;DR: In this article, a power MOSFET was used to suppress voltage breakdown near the gate using a polygon-shaped trench in which the gate was positioned, using a shaped deep body junction that partly lies below the trench bottom, and special procedures for growth of gate oxide at various trench corners.
Patent
Silicon carbide power mosfet with floating field ring and floating field plate
TL;DR: In this paper, the first and second silicon carbide layers are used to form a floating field ring in the termination region of a power MOSFET. But the floating field rings are not used in this paper.
Patent
Schottky barrier rectifier with mos trench
Jayant Baliga,M. Mehrotra +1 more
TL;DR: A trench MOS Schottky barrier rectifier as mentioned in this paper includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region on the cathode regions, extending to the second face.
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Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more