Journal ArticleDOI
Silicon gate technology
Federico Faggin,T. Klein +1 more
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TLDR
In this paper, the authors describe the technology and characteristics of insulated-gate field effect transistor integrated circuits using deposited polycrystalline silicon as the gate electrode, and a comparison between silicon gate technology and standard technology is carried out, using the 3705, an eight-channel multiplexer switch with decoding logic.Abstract:
This paper describes the technology and characteristics of insulated-gate field-effect transistor integrated circuits using deposited polycrystalline silicon as the gate electrode. After a brief outline of the characteristics of the silicon gate technology, some of the basic properties of the silicon-silicon dioxide-silicon system, the processing steps for the fabrication of silicon-gate devices, and the electrical characteristics of the devices obtained will be reviewed. A comparison between silicon gate technology and standard technology will be carried out, using the 3705, an eight-channel multiplexer switch with decoding logic. Design considerations for silicon gate technology and some design examples will be given.read more
Citations
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Journal ArticleDOI
Hall Mobility in Chemically Deposited Polycrystalline Silicon
TL;DR: In this article, the authors performed Hall mobility measurements on polycrystalline silicon films with and without doping impurities added during deposition or by diffusion from a doped vapordeposited oxide.
Journal ArticleDOI
Polysilicon: a versatile material for microsystems
TL;DR: In this article, the authors look back at the development of polysilicon, its structure, fabrication and both mechanical and electrical properties, and present a wide range of successful devices.
Journal ArticleDOI
Polysilicon as a material for microsensor applications
Ernst Obermeier,P. Kopystynski +1 more
TL;DR: In this paper, a pressure sensor utilizing polysilicon piezoresistors with a measurement range of 1 bar and a sensitivity of roughly 11 mV/V FS, a laser-trimmed poly-silicon temperature sensor with an accuracy of −3.4 × 10 −3 K −1 and non-linearity of less than 0.5% and an on-chip calibration and temperature compensation are described.
Journal ArticleDOI
Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator
TL;DR: In this paper, it has been found for p-channel MOS devices that considerably better radiation tolerance than generally believed possible can be obtained with gate insulators of thermally grown SiO2, provided that the processing conditions are optimized for radiation resistance.
Journal ArticleDOI
Refractory metal silicides: Thin-film properties and processing technology
T.P. Chow,Andrew J. Steckl +1 more
TL;DR: The thin-film properties of refractory metal silicides along with related VLSI process technology are reviewed in this article, where material considerations, including thinfilm deposition techniques, film structure, electrical properties, are covered.
References
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Book
Physics and technology of semiconductor devices
TL;DR: The Planar Technology of Semiconductor Surfaces is described in this article, where it is shown that the planar planar technology can be used to model the surface effects on p-n junction transistors.
Journal ArticleDOI
Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon
TL;DR: In this paper, the surface state charge associated with thermally oxidized silicon has been studied experimentally using MOS structures and the results indicate that the surface-state charge can be reproducibly controlled over a range 1010-1012 cm -2, and it is an intrinsic property of the silicon dioxide-silicon system.
Journal ArticleDOI
Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
A.S. Grove,O. Leistiko,C.T. Sah +2 more
TL;DR: In this paper, the redistribution of impurities during thermal oxidation of silicon was studied both theoretically and experimentally, and it was shown that the redistribution process can be significantly influenced by the escape of impurity through the oxide layer as well as by the segregation of the impurity at the oxide-silicon interface.
Journal ArticleDOI
Barrier energies in metal-silicon dioxide-silicon structures
TL;DR: In this article, the metal-silicon dioxide barrier energies have been determined for six metals, Ag, Al, Au, Cu, Mg and Ni, deposited on thermally oxidized silicon.
Journal ArticleDOI
Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates☆
TL;DR: In this article, a gate insulator, comprising 600 A of grown silicon dioxide covered with 400 A of silicon nitride, is formed at the beginning of fabrication, where the SiSiO2 interface is established at a point where the best state-of-theart cleaning techniques can be applied to the starting material.