Journal ArticleDOI
Simplified model for the domain dynamics in Gunn-effect semiconductors covered with dielectric sheets
TLDR
In this paper, a simplified model is proposed which describes the effect of the stray fields in dielectric surface layers on the dynamical behaviour of domains in thin Gunn-effect semiconductors.Abstract:
A simplified model is proposed which describes the effect of the stray fields in dielectric surface layers on the dynamical behaviour of domains in thin Gunn-effect semiconductors. The stray fields cause an increase in domain capacitance and hence a decrease in build-up time which leads to larger n0L products for stable operation.read more
Citations
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In partial fulfilment of the requirements for the Degree of Doctor of Philosophy in General Psychology
TL;DR: Three types of subo rd i n a t i v e composite sentence in O.B.I. as discussed by the authors, i.e., 'cause and e f f f e c t ','c o n d i t i o n a l'and'simultaneous-successive', are used to represent an intended or an undesirable consequence/situation.
Journal ArticleDOI
Domain suppression in Gunn diodes
TL;DR: In this paper, it was shown that electric lines of force leak out of the diodes in the presence of side loading with dielectrics of high permittivity or making them very thin.
Journal ArticleDOI
Two-dimensional computer analysis of dielectric-surface-loaded GaAs bulk element
TL;DR: In this paper, the authors investigated the effect of dielectric surface loading on the growth of dipole domains in a GaAs bulk element, and showed that a dipole domain originally produced by an inhomogeneity in GaAs is prevented from developing, as most of the space charges are concentrated near the surface boundary of GaAs by the presence of Dielectric material.
Journal ArticleDOI
Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser
TL;DR: In this article, a model of photo-activated charge wave was proposed based on the theory of photoactivated charge domain (PACD) in GaAs photoconductive semiconductor switches (PCSS), and moderate suppression of PACD formation was investigated theoretically and experimentally.
Journal ArticleDOI
On the transverse surface boundary effect in Gunn devices
TL;DR: In this article, a comparison between a rather rigorous space charge wave theory by Kino and Robson and a simplified large-signal model proposed by the author, concerning the influence of the transverse surface boundary condition on the space-charge dynamics in thin-sheet Gunn devices, shows that the results of both approaches are equivalent.
References
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Journal ArticleDOI
Negative resistance arising from transit time in semiconductor diodes
TL;DR: In this article, the structural simplicity of two-terminal compared to three-terminals indicates the potential importance of two terminal devices employing semiconductors and having negative resistance at frequencies properly related to the transit time of carriers through them.
Journal ArticleDOI
Principles of a phenomenological theory of Gunn-effect domain dynamics
TL;DR: In this article, a static drift-velocity field-strength characteristic is used to describe the dynamic behavior in the Gunn effect, and a reciprocity theorem between high field and low field domains is derived.
Journal ArticleDOI
A low-frequency analog for a Gunn-effect oscillator
J.E. Carroll,R.A. Giblin +1 more
TL;DR: In this article, a lumped-circuit analog of the Gunn diode is presented, which is able to simulate the initiation and circuit quenching of the domain, the transit time of a dipole domain, and the dynamic negative-resistance characteristic associated with the domain.
Journal ArticleDOI
Mechanisms in gunn effect microwave oscillators
TL;DR: In this paper, four microwave mechanisms found in Gunn diodes are discussed and an equivalent circuit is discussed and used to explain how these effects contribute to the various modes of oscillation exhibited by Gunn Diodes.
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The effect of small transverse dimensions on the operation of Gunn devices
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