Journal ArticleDOI
Single crystal growth and characterization of LaLuO3
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TLDR
In this article, a wide shoulder and fast lateral growth are characteristics of LaLuO 3 during crystallization onto an iridium rod in Czochralski's configuration, but spontaneous separation of the growing crystal from the melt is a strongly limiting factor for production of large boules.About:
This article is published in Optical Materials.The article was published on 1998-09-01. It has received 35 citations till now. The article focuses on the topics: Single crystal & Crystallization.read more
Citations
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Journal ArticleDOI
A Thermodynamic Approach to Selecting Alternative Gate Dielectrics
Darrell G. Schlom,J. H. Haeni +1 more
TL;DR: In this article, the authors used tabulated thermodynamic data to comprehensively assess the thermodynamic stability of binary oxides and nitrides in contact with silicon at temperatures from 300 K to 1600 K.
Patent
Nitrogen profile engineering in nitrided high dielectric constant films
TL;DR: In this paper, a method of forming a nitrided high-k film by disposing a substrate in a process chamber and forming the Nitrided hafnium based highk film on the substrate by depositing a nitrogen-containing film, and depositing an oxygen-containing one or more metal elements was described.
Patent
Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
TL;DR: In this paper, a gate dielectric that includes at least two rare earth, metal elements in the form of an oxynitride or an aluminum oxynetride was presented.
Journal ArticleDOI
Gate Oxides Beyond SiO2
TL;DR: The high-K materials revolution that is enabling Moore's law to continue beyond SiO 2 gate dielectric was discussed in this article, where the authors reviewed the high-k materials revolution in silicon-based field effect transistors.
Journal ArticleDOI
Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric
Joao Marcelo J. Lopes,M. Roeckerath,Tassilo Heeg,Eduard Rije,J. Schubert,S. Mantl,Valery V. Afanas'ev,Sheron Shamuilia,Andre Stesmans,Y. Jia,D.G. Schlom +10 more
TL;DR: In this paper, Lanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition, and the results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000°C.
References
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Journal ArticleDOI
Luminescence properties and scintillation mechanisms of cerium- and praseodymium-doped lutetium orthoaluminate
TL;DR: In this paper, it was shown that the exciton transfer to the dopant occurs at around 8 eV, and the energy transfer via sequential hole and electron trapping is dominant at higher energy.
Journal ArticleDOI
Optical studies of Ce3+ -doped gadolinium aluminium perovskite single crystals
TL;DR: Optical absorption, emission and excitation spectra and fluorescence decays of Ce3+-doped GdAlO3 single crystals are presented in this paper, where the influence of various transfer processes on fluorescence intensity is qualitatively discussed.
Journal ArticleDOI
Elaboration and spectroscopic properties of new dense cerium-doped lutetium based scintillator materials
TL;DR: In this article, two new systems, namely LaLuO 3 and Lu 4 Al 2 O 9 doped with cerium ions, have been investigated and their optical spectroscopy was carried out in the UV and VUV regions using laser and synchroton radiation and their fluorescence and scintillation mechanisms were analyzed.
Related Papers (5)
A Thermodynamic Approach to Selecting Alternative Gate Dielectrics
Darrell G. Schlom,J. H. Haeni +1 more