Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TLDR
In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.Abstract:
Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations.read more
Citations
More filters
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
Ferroelectricity in hafnium oxide thin films
TL;DR: In this paper, it was shown that crystalline phases with ferroelectric behavior can be formed in thin thin films of SiO2 doped hafnium oxide, which is suitable for field effect transistors and capacitors due to its excellent compatibility to silicon technology.
Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
Journal ArticleDOI
High dielectric constant oxides
TL;DR: In this article, the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects are discussed.
References
More filters
Book
Thermochemical properties of inorganic substances
Ihsan Barin,Ottmar Knacke +1 more
TL;DR: In this paper, a volume of tables conveying the thermochemical parameters of more than 2000 substances, cover enthalpy, entropy, chemical potential and Planck's function, and commentaries on the chemical reactions of the relevant component and indications of stability/metastability.
Book ChapterDOI
Pulsed laser deposition of thin films
TL;DR: Pulsed laser deposition of high-temperature superconducting thin films for active and passive device applications is discussed in this article, with a focus on the commercial scale-up of Pulsed Laser Deposition.
Book
Silicides for VLSI applications
TL;DR: This paper presents a meta-analysis of the physical properties of the Higgs boson gas molecule and its application in integrated circuit fabrication.
BookDOI
The Oxide handbook
TL;DR: The structure of the second edition of this handbook has not undergone any major changes; however, certain corrections and improvements have been made in the content of certain chapters.
Ferroelectric thin films
E.R. Myers,A.I. Kingon +1 more
TL;DR: The first Symposium dedicated to the field of ferroelectric thin films was held by the Materials Research Society at the Spring 1990 Meeting in San Francisco, CA, April 16-20, 1990 as mentioned in this paper.