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Journal ArticleDOI

Space charge limited current in an insulator at high fields

Y.K. Sharma
- 06 Nov 1980 - 
- Vol. 16, Iss: 23, pp 896-897
TLDR
In this article, it was shown that the correct high field current/voltage characteristic in space charge limited single-injection solid state diodes is obtained at sufficient high fields.
Abstract: 
It is shown that the correct high field current/voltage characteristic in space charge limited single-injection solid state diodes is obtained at sufficient high fields.

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Citations
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Journal ArticleDOI

Refractive index of In1−xGaxAsyP1−y layers and InP in the transparent wavelength region

B. Broberg, +1 more
- 01 May 1984 - 
TL;DR: In this article, the authors measured the refractive index of InP and of liquid phase-epitaxy-grown InGaAsP layers on InP in the transparent wavelength region using a Brewster-angle method.
Journal ArticleDOI

Mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers

Hiroshi Ishikawa, +2 more
- 01 Apr 1982 - 
TL;DR: The mechanism of asymmetric longitudinal mode competition in InGaAsP/InP lasers is discussed in this article, where it is shown that the asymmetric mode competition is not due to the spatial hole burning.
Journal ArticleDOI

Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity

J. R. Sun, +4 more
- 13 Dec 2010 - 
TL;DR: In this paper, the field-dependent permittivity from the polarization derivative is used to solve the space-charge-limited conduction, and the simulated leakage current densities are compared with the previous experimental observations.
Book ChapterDOI

Electrical behavior of particle-filled polymer nanocomposites

R.C. Smith, +2 more
TL;DR: In this paper, the authors considered the local and bulk properties due to loading of the host matrix with nanoparticles and showed that the resulting inclusions can affect the electrical properties of nanodielectric composites.
Journal ArticleDOI

The effect of temperature on the optical absorption edge of thin amorphous oxide films

S. K. J. Al-Ani, +1 more
- 01 Jul 1985 - 
TL;DR: In this article, the analysis of the optical adsorption edge as a function of temperature is discussed for some thin amorphous films of V2O5, Ge/SiO, GeO2-SiO and V 2O5/SiOsO and experimental measurements in the temperature range 95 to 485 K are discussed in terms of the well-known Urbach rule and the Mott and Davis theory.
References
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Book

Current injection in solids

Murray A. Lampert, +1 more