Journal ArticleDOI
Spectroscopic Manifestations of Self-Trapped Holes in Silica Theory and Experiment
Eugeny M. Dianov,V. N. Karpechev,V. O. Sokolov,Vladimir B. Sulimov,P. V. Chernov,L. S. Kornienko,I. O. Morozova,A. O. Rybaltovskii +7 more
Reads0
Chats0
TLDR
In this paper, the thermal excitation of holes from Anderson localized states of the top of the silica valence band above the mobility edge corresponds to the thermally stimulated luminescence peak at 125 K, and the analogous optical transition.Abstract:
A quantitative simulation in the cluster approximation is made of an autolocalized hole in the amorphous SiO2 network. A model is suggested in which the thermal excitation of holes from Anderson localized states of the top of the silica valence band above the mobility edge corresponds to the thermally stimulated luminescence peak at 125 K, and the analogous optical transition — the radiation-induced low-temperature IR-absorption. The position and form both, of the peak and absorption band and their thermo- and photostability are explained.
[Russian Text Ignored].read more
Citations
More filters
Journal ArticleDOI
Radiation Effects on Silica-Based Optical Fibers: Recent Advances and Future Challenges
Sylvain Girard,Jochen Kuhnhenn,Andrei Gusarov,Benoit Brichard,M. Van Uffelen,Youcef Ouerdane,Aziz Boukenter,Claude Marcandella +7 more
TL;DR: In this article, the effects of radiation on silica-based optical fibers are discussed and the main results regarding the fiber vulnerability and hardening to radiative constraints associated with several facilities such as Megajoule class lasers, ITER, LHC, nuclear power plants or with space applications.
Journal ArticleDOI
Colour centres in germanosilicate glass and optical fibres
TL;DR: In this paper, the state of the art of the study of germanium-related color centers in silica glass and silica-based fibres is presented and the origins of the models and formation mechanisms and their weak and strong points are analysed.
Journal ArticleDOI
Overview of radiation induced point defects in silica-based optical fibers
Sylvain Girard,Antonino Alessi,Nicolas Richard,Layla Martin-Samos,Vincenzo De Michele,Vincenzo De Michele,Luigi Giacomazzi,Simonpietro Agnello,Diego Di Francesca,Adriana Morana,Blaž Winkler,Imène Reghioua,Philippe Paillet,Marco Cannas,Thierry Robin,Aziz Boukenter,Youcef Ouerdane +16 more
TL;DR: In this article, a review of the main classes of silica-based optical fibers are presented: radiation tolerant pure-silica core or fluorine doped optical fibers, germanosilicate optical fibers and radiation sensitive phosphosilicates and aluminosa-ilimideal optical fibers.
Journal ArticleDOI
Low-Dose Radiation-Induced Attenuation at InfraRed Wavelengths for P-Doped, Ge-Doped and Pure Silica-Core Optical Fibres
TL;DR: In this paper, the authors study three prototype silica-based optical fibers and show that the RIA does not monotically decrease with increasing wavelength, highlighting RIA-contributions having their origins at NIR-wavelengths.
Journal ArticleDOI
Structure and properties of defects in amorphous silica: new insights from embedded cluster calculations
Peter V. Sushko,Sanghamitra Mukhopadhyay,A. S. Mysovsky,Vladimir B. Sulimov,Adrian Taga,Alexander L. Shluger +5 more
TL;DR: In this article, the structural criteria which favour the formation of different kinds of centres in the original amorphous structure are formulated in terms of the average Si-O distance of oxygen ion with its two neighboring silicon ions.
References
More filters
Journal ArticleDOI
Ground states of molecules. XXV. MINDO/3. Improved version of the MINDO semiempirical SCF-MO method
Book
Theory of defects in solids
TL;DR: In this paper, the authors describe the ideas and methods involved, including some of the ways basic understanding can help in applied problems, including how to understand defects and impurities in solids.
Journal ArticleDOI
The theory of defects in solids
TL;DR: In this article, the authors describe the ideas and methods involved, including some of the ways basic understanding can help in applied problems, and describe the methods involved in applying basic understanding to solids.
Journal ArticleDOI
Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide Semiconductors
TL;DR: In this article, the authors examined the effects of compositional variation on the distribution of states in amorphous semiconductors and predicted that an Anderson transition will occur in the band of lone-pair states when a group-VI element is added to a tetrahedral amorphized semiconductor.
Journal ArticleDOI
Charge-Carrier Transport Phenomena in Amorphous Si O 2 : Direct Measurement of the Drift Mobility and Lifetime
TL;DR: In this paper, the first direct measurement of the drift velocity of excess electrons is given as a function of applied field in amorphous Si${\mathrm{O}}_{2}$ using a transit-time technique.