Journal ArticleDOI
Spin-on sources for boron and arsenic diffusion
TLDR
In this paper, the authors report easy-to-prepare spin-on solutions for boron and arsenic which give highly reproducible surface concentrations very close to the solid solubility limit.Abstract:
‘Spin-on’ sources are commercially available either under brand names like ‘Accuspin’ or doped silicate films manufactured by various companies. However, the method of preparation of these doping solutions is not known and since almost all these solutions become jelly after a certain duration during which the viscosity changes, it is preferable to prepare one's own solution so that one can easily control the solution composition to a particular requirement and achieve reproducibility. In this paper, we report easy-to-prepare ‘spin-on’ solutions for boron and arsenic which give highly reproducible surface concentrations very close to the solid solubility limit. These solutions are useful for deep junction formation in silicon.read more
Citations
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Journal ArticleDOI
Improved shallow p+ diffusion into InGaAsP by a new spin‐on diffusion source
TL;DR: In this paper, a spin-on source based on Zn-doped alumina was used to improve the thermal expansion coefficients of diffusion source and semiconductor for InGaAsP (λ = 1.3 μm).
Journal ArticleDOI
Concentration profiling for high voltage p+-n-n+ diodes
V. P. Sundersingh,A. A. Ghatol +1 more
TL;DR: In this paper, a new concentration profile is proposed to reduce the surface electric field without increasing the peak bulk electric field in p+n-n+ structures, which results in a near ideal reverse breakdown voltage.
Journal ArticleDOI
Profile estimation of high-concentration arsenic or boron diffusion in silicon
Way-Seen Wang,Yu-Hwa Lo +1 more
TL;DR: In this article, a unified analytic approximation for high-concentration arsenic and boron diffusion profiles is presented, represented by a quadratic expression with coefficients determined by the impurity concentration near the surface and the total number of diffused impurities.
Journal ArticleDOI
Preparation, characterization and application of RF sputter deposited boron doped silicon dioxide thin films
TL;DR: In this article, the authors reported the preparation of thin film boron doped silicon dioxide (also called borosilicate-glass or BSG) by RF magnetron and its use as a diffusion source, especially for shallow junctions.
Journal ArticleDOI
Diffusion of boron into silicon from doped oxide source
P.M. Prasad,V.P. Sundarsingh +1 more
TL;DR: In this paper, a new technique for the preparation of boron doped oxide films on silicon by the pyrolytic decomposition of tetraethoxysilane and trimethyl borate is described.
References
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Journal ArticleDOI
Spun on arsenolica films as sources for shallow arsenic diffusions with high surface concentration
TL;DR: In this paper, an arseno silica glass film applied in liquid form is used as doping source for high concentrated, less than one micron deep, arsenic diffusions into silicon.
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Alcoholysis Reactions of Alkyl Silicates
Journal ArticleDOI
Arsenosilica film source for microwave transistor
P.C. Parekh,K. Kolmann +1 more
TL;DR: A detailed study of the effect of film spin speed and different drive-in ambient on the formation of surface defects was carried out as mentioned in this paper, where cross-sections of arsenic (emitter) and boron (base)_diffused junctions with oxide as the mask showed that pull of the base under the emitter (retardation) was a function of total base doping Q.